Yangzhou-Yangjie-Elec-Tech-MG100UZ12MRGJ
| Part # | Yangzhou-Yangjie-Elec-Tech-MG100UZ12MRGJ |
Download  | Yangzhou-Yangjie-Elec-Tech-MG100UZ12MRGJ |
RoHS
MG100UZ12MRGJ
COMPLIANT
IGBT Modules
V
RRM
1200V
I
FAV
100 A
Applications
Invertor
Uninterruptible Power Supply (UPS)
Convertor
Welder
SMPS
Convertor
Circuit
Features
Ultra Low Loss
Positive Temperature Coefficient
High Ruggedness
Fully isolated package
High Short Circuit Capability
Popular SOT-227 Package
Absolute Maximum Ratings
（
T
C
= 25
℃
unless otherwise specified
）
Symbol
V
CES
Description
Values
1200
±20
Units
V
Collector – Emitter Voltage
Gate-Emitter Voltage
V
GES
V
T
C
=25
℃
150
A
I
C
DC Collector Current
T
C
=80
℃
100
A
I
CM
P
D
Pulsed collector current
T
J
= 80
℃
200
A
Maximum Power Dissipation (IGBT)
Maximum Junction Temperature
Operating Temperature
T
C
= 25
℃
,T
Jmax
=150
℃
690
W
℃
℃
℃
V
T
J
150
T
JOP
-40 ~ +150
-40 ~ +125
3000
27
Storage Temperature
T
stg
Visol
Isolation Voltage (All Terminals Shorted)
Weight Of Module
f=50Hz, 1min
Weight
g
Module-to-Sink:M4
1.2
N*m
N*m
Mounting
Torque
Module Electrodes:M4
1.1
S-M274
www.
21yangjie
.com
Rev.2.0, 27-May-18
1
MG100HF12MRC1
C
R
O
M
o
P
H
LI
A
S
NT
Electrical Characteristics of IGBT
(T
J
= 25
℃
unless otherwise specified)
Values
Min. Typ. Max.
Symbol
Item
Conditions
Units
OFF Characteristics
Collector-Emitter Breakdown Voltage
Collector Leakage Current
Gate Leakage Current
V
GE
= 0V, I
C
= 1mA
V
CE
=V
CES
, V
GE
=0V,
1200
V
V
(BR)CES
100
uA
I
CES
V
CE
=V
CES
, V
GE
=0V,
T
J
=125°C
1
mA
nA
V
CE
=0V, V
GE
=±20V
-200
5
200
I
GES
ON Characteristics
Gate – Emitter Threshold Voltage
V
CE
=V
GE
, I
C
=1mA
I
C
=100A,V
GE
=15V
5.5
1.9
6.5
2.1
V
V
V
GE(th)
Collector – Emitter Saturation Voltage
V
CE(sat)
I
C
=100A,V
GE
=15V,
T
J
=125°C
2.2
2.4
V
Dynamic Characteristics
Input Capacitance
Output Capacitance
10
nF
nF
C
ies
V
CE
= 25V, V
GE
= 0V ,
f
＝
1MHz
0.78
C
oes
Switching Characteristics
Turn-on Delay Time
Rise Time
85
94
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
t
d(on)
t
r
t
d(off)
T
f
V
CC
= 600V, I
C
= 100A ,
Turn-off Delay Time
Fall Time
268
246
4.81
5.37
93
R
G
= 15
Ω
, V
GE
=±15V ,
Inductive Load, T
J
= 25
℃
Turn-on Switching Loss
Turn-off Switching Loss
Turn-on Delay Time
Rise Time
E
on
E
off
t
d(on)
t
r
98
V
CC
= 600V, I
C
= 100A ,
Turn-off Delay Time
Fall Time
297
344
7.6
t
d(off)
T
f
R
G
= 15
Ω
, V
GE
=±15V ,
Inductive Load, T
J
= 125
℃
Turn-on Switching Loss
Turn-off Switching Loss
E
on
E
off
10.1
V
CC
=600V, I
C
=100A,
V
GE
=±15V
Gate Charge
950
nC
Q
ge
I
C
= 200A ,V
CC
= 600V,
V =1200V,
Rg = 22
Ω
,
V
GE
=+15V to 0V,
L=500uH
，
T
J
=150°C
p
RBSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Trapezoid
V
CC
= 600V, V
GE
= 15V,
SCSOA
S-M237
10
μ
s
T
J
= 150
℃
www.
21yangjie
.com
Rev.2.0, 23-Jun-17
2
MG100HF12MRC1
C
R
O
M
o
P
H
LI
A
S
NT
Thermal Resistance Characteristics
Symbol
R
θ
JC
Description
Junction-To-Case (IGBT Part, Per Leg)
Case-To-Sink (Conductive Grease Applied)
Min.
Typ.
Max.
0.18
Units
℃
/W
R
θ
CS
0.05
℃
/W
Performance Curves
250
300
A
V
CE
=20V
A
200
T
J
=25
℃
T
J
=125
℃
150
100
T
J
=125
℃
I
C
0
T
J
=125
℃
I
C
0
0
V
CE(sat)
1.2
2.4
V
3.6
0
V
GE
4
8
V
14
Fig2. Typical Transfer Characteristics
Fig1. Typical Output Characteristics
50
120
mJ
V
CC
=600V
I
C
=100A
V
GE
=±15V
V
CC
=600V
R
G
=10ohm
V
GE
=±15V
T
J
=125°C
mJ
T
J
=125°C
Eon
80
Eon
30
20
40
Eon
Eoff
Eon
Eoff
Eoff
Eoff
0
0
0
I
C
100
200
A
350
0
R
G
20
40
ꢀ
70
Fig3. Switching Energy vs. Collector Current
Fig4. Switching Energy vs. Gate Resistor
S-M237
Rev.2.0, 23-Jun-17
www.
21yangjie
.com
3
MG100HF12MRC1
C
R
O
M
o
P
H
LI
A
S
NT
175
A
1
T
J
=150°C
V
GE
≥
15V
K/W
10
-1
Duty
0.5
0.2
100
10
-2
0.1
0.05
Single Pulse
50
I
C
10
-3
Zthjc
10
-4
0
0
T
C
50
100
℃
175
10
-4
R
G
10
-3
10
-2
10
-1
ꢀ
1
Fig5. Rated Current vs. TC
Fig6. Transient Thermal Impedance
Package Outline Information
CASE: GJ
Dimensions in mm
S-M237
www.
21yangjie
.com
Rev.2.0, 23-Jun-17
4
