Yangzhou-Yangjie-Elec-Tech-MT100DT08L1

MT100D

T

–

L

1

RoHS  

COMPLIANT  

Three Phase Bridge  

+ Thyristor  

V

RRM

/ V

DRM  

I

FAV

/ I

TAV  

800 to 1800V  

100A  

Features  







Blocking voltage:800 to 1800V  

Three Phase Bridge and a Thyristor  

Isolated Module package  

Circuit  

Applications  









Inverter for AC or DC motor control  

Current stabilized power supply  

Switching power supply  

UL recognized applied for file no. E360040  

Module Type  

TYPE  

V

RRM

/ V

DRM  

V

RSM  

MT100DT08L1  

MT100DT12L1  

MT100DT16L1  

MT100DT18L1  

800V  

1200V  

1600V  

1800V  

900V  

1300V  

1700V  

1900V  

◆

Diode  

Maximum Ratings  

Symbol  

Item  

Conditions  

Tc=100

℃

Three phase full wave  

Values  

100  

Units  

I

D  

I

FSM  

i

2

t  

Output Current(D.C.)  

A

Surge forward current  

t=10mS Tvj =45

℃  

1200  

A

Circuit Fusing Consideration  

Isolation Breakdown Voltage(R.M.S)  

Operating Junction Temperature  

Storage Temperature  

7200  

A

2

s  

V

Visol  

Tvj  

a.c.50HZ;r.m.s.;1min  

3000  

-40 to +150  

-40 to +125  

3±15%  

3±15%  

210  

℃

℃

Nm  

Nm  

g

Tstg  

Mt  

Mounting Torque  

To terminals(M5)  

Ms  

To heatsink(M5)  

Weight  

Module

（

Approximately

）  

Thermal Characteristics  

Symbol  

R

th(j-c)  

Item  

Conditions  

Junction to Case(TOTAL)  

Case to Heatsink  

Values  

0.18  

Units  

℃

/W  

Thermal Impedance, max.  

Rth(c-s) Thermal

 

Impedance, max.  

0.10  

℃

/W  

Electrical Characteristics  

Symbol  

Item  

Conditions  

Values  

Units  

V

FM  

Forward Voltage Drop, max.  

T=25

℃

I

F

=100A  

1.35  

V

T

vj

=25

℃

V

RD

=V

RRM  

T

vj

=150

℃

V

RD

=V

RRM  

Repetitive Peak Reverse Current,  

max.  

≤

0.5  

≤

6  

mA  

mA  

I

RRM  

S-M057  

Rev.2.0, 27-May-17  

www.

21yangjie

.com  

1

RoHS  

MT100D

T

–

L1  

COMPLIANT  

◆

Thyristor  

Maximum Ratings  

Symbol  

Item  

Conditions  

Values  

Units  

Tc=92

℃

, Single Phase half wave  

I

TAV  

Average On-State Current  

100  

A

180

o

conduction  

T

VJ

=45

℃

t=10ms (50Hz), sine  

V

R

=0  

I

TSM  

Surge On-State Current  

1200  

A

i

2

t  

Visol  

Tvj  

Circuit Fusing Consideration  

Isolation Breakdown Voltage(R.M.S)  

Operating Junction Temperature  

Storage Temperature  

7200  

3000  

A

2

s  

V

a.c.50H

Z

;r.m.s.;1 min  

-40 to +125  

-40 to +125  

3±15%  

℃

Tstg  

Mt  

℃

Mounting Torque  

To terminals(M5)  

To heatsink(M5)  

Nm  

Nm  

Ms  

3±15%  

Critical Rate of Rise of On-State  

Current  

T

VJ

=T

VJM

, V

D

=1/2V

DRM

,I

G

=100mA  

d

iG

/d

t

=0.1A/

μ

s  

di/dt  

150  

500  

A/

μ

s  

V/

μ

s  

Critical Rate of Rise of Off-State  

Voltage, min.  

T

J

=T

VJM

,V

D

=2/3V

DRM

,linear voltage  

rise  

dv/dt  

Electrical and Thermal Characteristics  

Values  

Min. Typ. Max.  

Symbol  

Item  

Conditions  

Units  

V

TM  

Peak On-State Voltage, max.  

T=25

℃

I

T

=100A  

1.25  

V

Repetitive Peak Reverse Current,  

I

RRM

/I

DRM

max. / Repetitive Peak Off-State  

Current, max.  

T

VJ

=T

VJM

,V

R

=V

RRM

,V

D  

=V

DRM  

20  

mA  

V

GT  

I

GT  

Gate Trigger Voltage, max.  

Gate Trigger Current, typ /max.  

Hoding Current, typ / max.  

Iatching Current, typ / max.  

Thermal Impedance, max.  

T

VJ

=25

℃

, V

D

=6V  

T

VJ

=25

℃

, V

D

=6V  

T

VJ

=25

℃

, V

D

=6V  

T

VJ

=25

℃

, R =33

Ω  

Junction to Case  

1

3

V

65  

150  

220  

400  

0.26  

0.10  

mA  

I

H  

120  

180  

mA  

I

L  

mA  

Rth(j-c)  

℃

/W  

℃

/W  

Rth(c-s) Thermal

 

Impedance, max.  

Case to Heatsink  

S-M057  

Rev.2.0, 27-May-17  

www.

21yangjie

.com  

2

RoHS  

MT100D

T

–

L1  

COMPLIANT  

Performance Curves  

300  

W

200  

A

Three phase  

Three phase  

240  

180  

120  

60  

160  

120  

80  

40  

I

D  

P

vtot  

0

0

0

I

D  

20  

40  

60  

80  

A 100  

0

Tc  

50  

100  

℃

150  

Fig1. Power dissipation  

Fig2. Forward Current Derating Curve  

0.20  

2000  

A

50HZ  

℃

/ W  

Z

th(j-

C

)  

Per one element  

0.10  

1000  

Single phase half wave  

Tj=25

℃

start  

0

0

1

10  

cycles 100  

0.001  

t

0.01  

0.1  

1.0  

10  

S 100  

Fig4. Max Non-Repetitive Forward Surge  

Current  

Fig3. Transient thermal impedance  

150  

W

1000  

max

.  

A

120  

90  

100  

60  

30  

I

F  

Tj=25

℃  

P

TAV  

0

10  

0

I

D  

20  

40  

60  

80  

A 100  

0.5 V

F  

1.0  

1.5  

2.0  

V

2.5  

Fig5. Forward Characteristics  

Fig6. SCR Power dissipation  

www.

21yangjie

.com  

S-M057  

Rev.2.0, 27-May-17  

3

RoHS  

MT100D

T

–

L1  

COMPLIANT  

200  

A

0.50  

℃

/ W  

160  

120  

0.25  

Z

th(j-

C

)  

80  

40  

I

TAVM  

0

0

0.001  

t

0.01  

0.1  

1.0  

10  

S 100  

0

Tc  

50  

100  

℃

150  

Fig8. SCR Transient thermal impedance  

Fig7. SCR Forward Current Derating Curve  

1000  

100  

V

max.  

max

.  

A

Peak Forward Gate Voltage (10V)  

10  

1

100  

-10

℃  

135

℃  

V

G  

I

T  

25

℃  

Maximum Gate Non-Trigger Voltage  

Tj=25

℃  

10  

0.1  

10

1

I

G  

10

2  

10

3  

mA 10

4  

0.5 V

TM  

1.0  

1.5  

2.0  

V

2.5  

Fig9. SCR Forward Characteristics  

Fig10. Gate trigger Characteristics  

S-M057  

www.

21yangjie

.com  

Rev.2.0, 27-May-17  

4

RoHS  

MT100D

T

–

L1  

COMPLIANT  

Package Outline Information  

CASE: L1  

Dimensions in mm  

S-M057  

www.

21yangjie

.com  

Rev.2.0, 27-May-17  

5