Yangzhou-Yangjie-Elec-Tech-MT200CB08T2
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RoHS
MT200CB-T2
COMPLIANT
Thyristor/Diode Modules
V
RRM
/ V
DRM
I
FAV
/ I
TAV
800 to 1800V
200A
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040
Module Type
TYPE
V
RRM/
V
DRM
V
RSM
MT200CB08T2
MT200CB12T2
MT200CB16T2
MT200CB18T2
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
◆
Diode
Maximum Ratings
Symbol
Item
Conditions
Values
Units
A
I
D
I
FSM
i
2
t
Output Current(D.C.)
Tc=85
℃
200
Surge forward current
t=10mS Tvj =45
℃
6800
A
A
2
s
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
231200
3000
Visol
Tvj
a.c.50HZ;r.m.s.;1min
V
-40 to +125
-40 to +125
3±15%
5±15%
165
℃
Tstg
Mt
℃
Mounting Torque
To terminals(M6)
To heat sink(M6)
Nm
Nm
g
Ms
Weight
Module
（
Approximately
）
Thermal Characteristics
Symbol
R
th(j-c)
Item
Conditions
Junction to Case
Values
0.08
Units
℃
/W
Thermal Impedance, max.
Rth(c-s) Thermal
Impedance, max.
Case to Heat sink
0.05
℃
/W
Electrical Characteristics
Values
Min. Typ.
Symbol
V
FM
Item
Conditions
Units
Max.
1.70
Forward Voltage Drop, max.
V
T=25
℃
I
F
=620A
T
vj
=25
℃
V
RD
=V
RRM
T
vj
=125
℃
V
RD
=V
RRM
Repetitive Peak Reverse Current,
max.
≤
0.5
≤
9
mA
mA
I
RRM
S-M314
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.com
Rev.1.0,02-Dec-19
1
RoHS
MT200CB-T2
COMPLIANT
◆
Thyristor
Maximum Ratings
Symbol
Item
Conditions
Values
Units
I
TAV
Average On-State Current
Sine 180
o
;Tc=85
℃
200
A
T
VJ
=45
℃
t=10ms, sine
T
VJ
=125
℃
t=10ms, sine
5500
5000
I
TSM
Surge On-State Current
A
T
VJ
=45
℃
t=10ms, sine
T
VJ
=125
℃
t=10ms, sine
151000
125000
i
2
t
Circuit Fusing Consideration
A2s
Visol
Tvj
Isolation Breakdown Voltage(R.M.S)
a.c.50HZ;r.m.s.;1min
Operating Junction Temperature
3000
V
-40 to +125
-40 to +125
3
±
15%
℃
Tstg
Mt
Storage Temperature
℃
Mounting Torque
To terminals(M6)
To heat sink(M6)
Nm
Nm
Ms
5
±
15%
Critical Rate of Rise of On-State
Current
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
di/dt
200
A/us
Critical Rate of Rise of Off-State
Voltage, min.
dv/dt
a
T
J
=T
VJM
,2/3V
DRM
linear voltage rise
1000
50
V/us
m/s
2
Maximum allowable acceleration
Thermal Characteristics
Symbol
R
th(j-c)
Item
Conditions
Junction to Case
Values
0.16
Units
℃
/W
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Case to Heat sink
0.10
℃
/W
Electrical Characteristics
Values
Min. Typ.
Max.
Symbol
Item
Conditions
Units
V
TM
Peak On-State Voltage, max.
T=25
℃
I
T
=620A
1.70
V
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=
V
DRM
I
RRM
/I
DRM
40
mA
For power-loss
calculations only
(T
VJ
=125
℃
)
V
TO
On state threshold voltage
0.85
1.5
V
Value of on-state
slope resistance. max
r
T
T
VJ
=T
VJM
m
Ω
V
GT
I
GT
V
GD
I
GD
I
L
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Non-triggering gate voltage, max.
Non-triggering gate current, max.
Latching current, max.
T
VJ
=25
℃
, V
D
=6V
3
V
T
VJ
=25
℃
, V
D
=6V
200
0.25
10
mA
V
T
VJ
=125
℃
,V
D
=2/3V
DRM
T
VJ
=125
℃
, V
D
=2/3V
DRM
T
VJ
=25
℃
, R
G
= 33
Ω
T
VJ
=25
℃
, V
D
=6V
mA
mA
mA
300
150
1000
400
I
H
Holding current, max.
TVJ=25
℃
,
IG=1A, di
G
/dt=1A/us
tgd
tq
Gate controlled delay time
1
us
us
Circuit commutated turn-off time
T
VJ
=T
VJM
100
S-M314
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21yangjie
.com
Rev.1.0,02-Dec-19
2
RoHS
MT200CB-T2
COMPLIANT
Performance Curves
300
W
300
A
DC
240
sin.180
rec.120
DC
200
rec.60
180
sin.180
rec.120
rec.30
120
60
rec.60
rec.30
100
P
TAV
0
I
TAVM
0
0
I
TAV
50
100
150
A
200
0
Tc
50
100
℃
130
Fig1. Power dissipation
Fig2.Forward Current Derating Curve
6000
A
0.30
50HZ
℃
/ W
Z
th(j-
S
)
0.1
3000
Z
th(j-
C
)
0
0
10
100
ms 1000
0.001
t
0.01
0.1
1
10
S 100
Fig3. Transient thermal impedance
Fig4. Max Non-Repetitive Forward Surge
Current
600
A
Typ
.
400
max
.
200
25
℃
– – –
125
℃
I
T
0
0
V
TM
0.5
1.0
1.5
V
2.0
Fig5. Forward Characteristics
S-M314
Rev.1.0,02-Dec-19
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.com
3
RoHS
MT200CB-T2
COMPLIANT
100
V
1/2
·
MT200CB18T2
20V;20
Ω
10
1
V
GT
∧
PG(tp)
-40
℃
25
℃
T
vj
125
℃
V
GD125
℃
I
GT
V
G
I
GD125
℃
0.1
0.001 I
G
0.01
0.1
1
10
A 100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T2
Dimensions in mm
S-M314
www.
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.com
Rev.1.0,02-Dec-19
4
