Yangzhou-Yangjie-Elec-Tech-YJD120N04A
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RoHS
COMPLIANT
YJD120N04A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
40 V
● I
D
120 A
● R
DS(ON)
( at V
GS
=10V)
● R
DS(ON)
( at V
GS
=4.5V)
● 100% UIS Tested
● 100%
▽
V
DS
Tested
＜
3.5 mohm
＜
4.8 mohm
General Description
● Trench Power LV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low R
DS(ON)
Applications
● DC-DC Converters
● Power management functions
● Backlighting
Absolute Maximum Ratings
(T =25
℃
unless otherwise noted)
■
A
Parameter
Symbol
Limit
40
Unit
V
Drain-source Voltage
Gate-source Voltage
V
DS
V
GS
±
20
120
V
T
C
=25
℃
T
C
=100
℃
Drain Current
I
D
A
76
Pulsed Drain Current
A
I
DM
P
D
390
A
W
Total Power Dissipation @ T
C
=25
℃
B
Total Power Dissipation @ T
C
=100
℃
B
Total Power Dissipation @ T
A
=25
℃
C
Single Pulse Avalanche Energy
D
110
P
D
44
W
P
D
6.2
W
E
AS
272
mJ
℃
/
W
℃
/
W
℃
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature Range
R
θJC
R
θJA
T
J
,T
STG
1.14
20
-55
～
+150
Ordering Information
(Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJD120N04A
F2
YJD120N04A
2500
/
25000
13“ reel
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S-E099
Rev.3.0,28-Sep-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJD120N04A
Electrical Characteristics
(T =25
℃
unless otherwise noted)
■
J
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
= 0V, I
D
=250μA
V
DS
=40V,V
GS
=0V
V
GS
=
±
20V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
= 10V, I
D
=15A
V
GS
= 4.5V, I
D
=10A
I
S
=15A,V
GS
=0V
40
V
1
±
100
2.5
μA
nA
V
I
GSS
V
GS(th)
1.0
1.5
2.8
3.5
Static Drain-Source On-Resistance
R
DS(ON)
mΩ
4.0
4.8
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Gate resistance
V
SD
I
S
0.80
1.2
V
A
120
Rg
ƒ=1 MHz, Open drain
3.1
Ω
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
4645
436
Output Capacitance
V
DS
=20V,V
GS
=0V,f=1MHZ
pF
nC
ns
Reverse Transfer Capacitance
Switching Parameters
T
o
tal Gate Charge
360
Q
g
(10V)
102
49
T
o
tal Gate Charge
Q
g
(4.5V)
V
GS
=10V,V
DS
=20V,I
D
=20A
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
Q
rr
t
rr
15.8
21.9
7.4
22.3
12
Reverse Recovery Charge
Reverse Recovery Time
Turn-on Delay Time
I
F
=20A, di/dt=100A/us
t
D(on)
t
r
t
D(off)
t
f
Turn-on Rise Time
54
V
GS
=10V, V
DD
=20V , I
D
=20A
R
GEN
=3Ω
Turn-off Delay Time
120
80
Turn-off fall Time
A. Pulse
Test: Pulse Width
≤
300us,Duty cycle
≤
2%.
B. The
power dissipation P
D
is based on T
J(MAX)
=150
℃
, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
R
C. The
value of
θJA
is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
℃
.
D. T
j
=25
℃
, V
DD
=40V, V
G
=10V, L=0.5mH.
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S-E099
Rev.3.0,28-Sep-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJD120N04A
■ Typical Performance Characteristics
Figure1. Output
Characteristics
Figure2. Transfer
Characteristics
Figure3. Capacitance
Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-E099
Rev.3.0,28-Sep-20
YJD120N04A
Figure7. Safe Operation Area
Figure8. Drain current vs. Case Temperature
Figure9. Normalized Maximum Transient Thermal Impedance
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S-E099
Rev.3.0,28-Sep-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJD120N04A
■
TO-252 Package
information
5 / 6
S-E099
Rev.3.0,28-Sep-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJD120N04A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
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S-E099
Rev.3.0,28-Sep-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
