Yangzhou-Yangjie-Elec-Tech-YJG90N04A
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RoHS
COMPLIANT
YJG90N04A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
40V
● I
D
90A
● R
DS(ON)
( at V
GS
= 10V)
● R
DS(ON)
( at V
GS
= 4.5V)
● 100% UIS Tested
● 100%
▽
V
DS
Tested
＜
4.5mohm
＜
6.5mohm
General Description
● Trench Power LV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low R
DS(ON)
Applications
● High current load applications
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Absolute Maximum Ratings
(T =25
℃
unless otherwise noted)
■
A
Parameter
Symbol
Limit
40
Unit
V
Drain-source Voltage
Gate-source Voltage
Drain Current
V
DS
V
GS
±
20
V
T
C
=25
℃
90
63
I
D
A
T
C
=100
℃
Pulsed Drain Current
A
I
DM
340
55
A
T
C
=25
℃
W
Total Power Dissipation
P
D
T
C
=100
℃
27.5
W
Single Pulse Avalanche Energy
B
E
AS
220
mJ
℃
/
W
℃
Thermal Resistance Junction-to-Case
C
Junction and Storage Temperature Range
R
θJC
2.73
T
J
,T
STG
-55
～
+175
Ordering Information
(Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJG90N04A
F1
YJG90N04A
5000
10000
100000
13“ reel
1 / 7
S-E625
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJG90N04A
Electrical Characteristics
(T =25
℃
unless otherwise noted)
■
J
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
V
GS
= 0V, I
D
=250μA
V
DS
=40V,V
GS
=0V
V
GS
=
±
20V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
= 10V, I
D
=20A
V
GS
= 4.5V, I
D
=20A
I
S
=20A,V
GS
=0V
40
V
I
DSS
1
±
100
2.0
μA
nA
V
I
GSS
V
GS(th)
0.7
1.2
3.5
4.5
Static Drain-Source On-Resistance
R
DS(ON)
mΩ
4.4
6.5
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Dynamic Parameters
Input Capacitance
V
SD
0.85
1.2
V
A
I
S
90
C
iss
C
oss
C
rss
3440
413
Output Capacitance
V
DS
=20V,V
GS
=0V,f=1MHZ
pF
nC
ns
Reverse Transfer Capacitance
Switching Parameters
T
o
tal Gate Charge
314
Q
g
Q
gs
Q
gd
Q
rr
t
rr
10.9
19.7
89
Gate-Source Charge
Gate-Drain Charge
V
GS
=10V,V
DS
=20,I
D
=20A
I
F
=20A, di/dt=100A/us
Reverse Recovery Charge
Reverse Recovery Time
Turn-on Delay Time
7.3
24
t
D(on)
9
Turn-on Rise Time
t
r
20
V
GS
=10V,V
DD
=20V, I
D
=2A,R
L
=1Ω
R
GEN
=3Ω
Turn-off Delay Time
t
D(off)
69
Turn-off fall Time
t
f
41
A. Pulse
Test: Pulse Width
≤
300us,Duty cycle
≤
2%.
R
B.
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
R
R
mounting surface of the drain pins.
θJC
is guaranteed by design, while
θJA
is determined by the board design. The maximum rating presented
here is based on mounting on a 1 in 2
pad of 2oz copper.
2 / 7
S-E625
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJG90N04A
■ Typical Performance Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance vs. Junction Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge
3 / 7
S-E625
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJG90N04A
Figure 7. Safe Operation Area
Figure 8. Maximum Continuous Drain Current
vs Case Temperature
Figure 9. Normalized Maximum Transient Thermal Impedance
4 / 7
S-E625
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJG90N04A
Resistive Switching Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
5 / 7
S-E625
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJG90N04A
■
PDFN5X6 Package
information
6 / 7
S-E625
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJG90N04A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
7 / 7
S-E625
Rev.3.1,12-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
