Yangzhou-Yangjie-Elec-Tech-YJL2301GW

RoHS  

COMPLIANT  

YJL2301GW  

P-Channel Enhancement Mode Field Effect Transistor  

Product Summary  

● V

DS  

-19V  

● I

D  

-1.5A  

● R

DS(ON)

( at V

GS

=-4.5V)  

● R

DS(ON)

( at V

GS

=-2.5V)  

● R

DS(ON)

( at V

GS

=-1.8V)  

＜

108 mohm  

＜

130 mohm  

＜

230 mohm  

General Description  

● Trench Power LV MOSFET technology  

● Low R

DS(ON)  

● Low Gate Charge  

Applications  

● Video monitor  

● Power management  

Absolute Maximum Ratings

(T =25

℃

unless otherwise noted)  

■

A

Parameter  

Symbol  

Maximum  

-19  

Unit  

V

Drain-source Voltage  

Gate-source Voltage  

Drain Current  

V

DS  

V

GS  

±

10  

V

T

A

=25

℃

@ Steady

 

State  

T

A

=70

℃

@ Steady

 

State  

-1.5  

-1.2  

I

D  

A

Pulsed Drain Current

A  

Total Power Dissipation @ T

A

=25

℃  

I

DM  

-8  

0.25  

A

P

D  

W

Thermal Resistance Junction-to-Ambient

B  

Junction and Storage Temperature Range  

R

θJA  

500  

℃

/

W  

℃

T

J

,T

STG  

-55

～

+150  

Ordering Information

(Example)  

■

PACKING  

PREFERED P/N  

MINIMUM  

PACKAGE(pcs)  

INNER BOX  

QUANTITY(pcs)  

OUTER CARTON  

QUANTITY(pcs)  

Marking  

DELIVERY MODE  

CODE  

YJL2301G  

F2  

2301

G

.  

3000  

30000  

120000  

7“ reel  

1 / 6  

S-E101  

Rev3.0,25-Sep-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

YJL2301GW  

Electrical Characteristics

(T =25

℃

unless otherwise noted)  

■

J

Parameter  

Symbol  

Conditions  

Min  

Typ  

Max  

Units  

Static Parameter  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

BV

DSS  

V

GS

= 0V, I

D

=-250μA  

V

DS

=-19V,V

GS

=0V,T

C

=25

℃  

V

GS

=

±

10V, V

DS

=0V  

V

DS

= V

GS

, I

D

=-250μA  

V

GS

= -4.5V, I

D

=-1.5A  

V

GS

= -2.5V, I

D

=-1.5A  

V

GS

= -1.8V, I

D

=-1.5A  

I

S

=-1.5A,V

GS

=0V  

-19  

V

I

DSS  

-1  

±

100  

-1.0  

108  

μA  

nA  

V

I

GSS  

V

GS(th)  

-0.4  

-0.62  

90  

Static Drain-Source On-Resistance  

R

DS(ON)  

105  

140  

-0.8  

130  

mΩ  

V

230  

Diode Forward Voltage  

Dynamic Parameters  

Input Capacitance  

V

SD  

-1.2  

C

iss  

C

oss  

C

rss  

327  

62  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Parameters  

Total Gate Charge  

V

DS

=-10V,V

GS

=0V,f=1MHZ  

pF  

nC  

ns  

55  

Q

g  

Q

gs  

Q

gd  

Q

rr  

t

rr  

3.9  

0.7  

0.9  

2.3  

27  

6

Gate Source Charge  

Gate Drain Charge  

V

GS

=-4.5V,V

DS

=-10V,I

D

=-1.5A  

Reverse Recovery Charge  

Reverse Recovery Time  

Turn-on Delay Time  

Turn-on Rise Time  

I

F

=-1.5A, di/dt=100A/us  

t

D(on)  

t

r  

30  

45  

46  

V

GS

=-4.5V,V

DD

=-10V, I

D

=-1A,  

R

GEN

=2.5Ω  

Turn-off Delay Time  

Turn-off Fall Time  

t

D(off)  

t

f  

A. Pulse

 

T

e

st: Pulse Width

≤

300us,Duty cycle

≤

2%.  

B. Device

 

mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.  

2 / 6  

S-E101  

Rev3.0,25-Sep-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

YJL2301GW  

■ Typical Performance Characteristics  

Figure1. Output

 

Characteristics  

Figure2. Transfer

 

Characteristics  

Figure3. Capacitance

 

Characteristics  

Figure4. Gate Charge  

Figure5. Drain-Source on Resistance  

Figure6. Drain-Source on Resistance  

3 / 6  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

S-E101  

Rev3.0,25-Sep-20  

YJL2301GW  

Figure7. Safe Operation Area  

Figure8.

Drain Current vs Ambient temperature  

4 / 6  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

S-E101  

Rev3.0,25-Sep-20  

YJL2301GW  

■

SOT-323 Package

 

information  

5 / 6  

S-E101  

Rev3.0,25-Sep-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

YJL2301GW  

Disclaimer  

The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the  

right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design  

or otherwise.  

The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with  

equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as  

medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety  

devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use  

of sale.  

This publication supersedes & replaces all information previously supplied. For additional information, please visit our website  

http://

, or consult your nearest Yangjie’s sales office for further assistance.  

6 / 6  

S-E101  

Rev3.0,25-Sep-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.