Yangzhou-Yangjie-Elec-Tech-YJL3134KW

RoHS  

COMPLIANT  

YJL3134KW  

N-Channel Enhancement Mode Field Effect Transistor  

Product Summary  

● V

DS  

20 V  

● I

D  

0.75 A  

● R

DS(ON)

( at V

GS

=4.5V)  

● R

DS(ON)

( at V

GS

=2.5V)  

＜

260 mohm  

＜

360 mohm  

● ESD Protected Up to 4.0KV (HBM)  

General Description  

● Trench Power LV MOSFET technology  

● High Power and current handing capability  

Applications  

● PWM application  

● Load switch  

Absolute Maximum Ratings

(T =25

℃

unless otherwise noted)  

■

A

Parameter  

Symbol  

Limit  

Unit  

Drain-source Voltage  

Gate-source Voltage  

V

DS  

V

GS  

20  

±

12  

0.75  

V

V

T

A

=25

℃

@ Steady State  

T

A

=70

℃

@ Steady State  

Drain Current  

I

D  

A

0.6  

Pulsed Drain Current

A  

I

DM  

3.5  

A

W

Total Power Dissipation @ T

A

=25

℃  

P

D  

0.2  

Thermal Resistance Junction-to-Ambient @ Steady State  

Junction and Storage Temperature Range  

R

θJA  

625  

℃

/

W  

℃

T

J

,T

STG  

-55

～

+150  

Ordering Information

(Example)  

■

PACKING  

PREFERED P/N  

MINIMUM  

PACKAGE(pcs)  

INNER BOX  

QUANTITY(pcs)  

OUTER CARTON  

QUANTITY(pcs)  

Marking  

DELIVERY MODE  

CODE  

YJL3134KW  

F2  

34K.  

3000  

30000  

120000  

7“ reel  

1 / 6  

S-E043  

Rev.3.0,15-Feb-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

YJL3134KW  

Electrical Characteristics

(T =25

℃

unless otherwise noted)  

■

J

Parameter  

Symbol  

Conditions  

Min  

Typ  

Max  

Units  

Static Parameter  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

=250μA  

V

DS

=20V,V

GS

=0V  

20  

V

1

±

10  

±

2000  

1.1  

μA  

μA  

nA  

V

V

GS

=

±

10V, V

DS

=0V  

V

GS

=

±

8V, V

DS

=0V  

V

DS

= V

GS

, I

D

=250μA  

V

GS

= 4.5V, I

D

=0.5A  

V

GS

= 2.5V, I

D

=0.3A  

V

GS

= 1.8V, I

D

=0.2A  

I

S

=0.75A,V

GS

=0V  

2.5  

500  

0.75  

165  

215  

300  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

GSS  

V

GS(th)  

0.35  

260  

Static Drain-Source On-Resistance  

R

DS(ON)  

360  

mΩ  

700  

Diode Forward Voltage

C  

Maximum Body-Diode Continuous Current  

Dynamic Parameters

B  

Input Capacitance  

V

SD  

I

S  

1.2  

V

A

0.75  

C

iss  

C

oss  

C

rss  

56  

20  

Output Capacitance  

V

DS

=10V,V

GS

=0V,f=1MHZ  

pF  

nC  

ns  

Reverse Transfer Capacitance  

Switching Parameters

B  

Total Gate Charge  

2.5  

Q

g  

Q

gs  

Q

gd  

Q

rr  

t

rr  

1

Gate Source Charge  

V

GS

=4.5V,V

DS

=10V,I

D

=0.5A  

0.28  

0.22  

0.4  

14.4  

2

Gate Drain Charge  

Reverse Recovery Chrage  

Reverse Recovery Time  

Turn-on Delay Time  

I

F

=0.5A, di/dt=20A/us  

t

D(on)  

t

r  

t

D(off)  

t

f  

Turn-on Rise Time  

18.8  

10  

V

GS

=4.5V,V

DD

=10V,R

G

=10Ω,I

D

=500mA  

Turn-off Delay Time  

Turn-off Fall Time  

23  

A. Repetitive

 

Rating: Pulse width limited by maximum junction temperature.  

B. These

 

parameters have no way to verify.  

C. Pulse

 

Test: Pulse Width≤300us, Duty Cycle≤0.5%.  

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S-E043  

Rev.3.0,15-Feb-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

YJL3134KW  

■ Typical Performance Characteristics  

Figure1. Output

 

Characteristics  

Figure2. Transfer

 

Characteristics  

Figure3. Capacitance

 

Characteristics  

Figure4. Gate Charge  

Figure5. Drain-Source on Resistance  

Figure6. Drain-Source on Resistance  

3 / 6  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

S-E043  

Rev.3.0,15-Feb-20  

YJL3134KW  

Figure7. Safe Operation Area  

Figure8. Switching wave  

4 / 6  

S-E043  

Rev.3.0,15-Feb-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

YJL3134KW  

■

SOT-323 Package

 

information  

5 / 6  

S-E043  

Rev.3.0,15-Feb-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

YJL3134KW  

Disclaimer  

The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the  

right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design  

or otherwise.  

The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with  

equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as  

medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety  

devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use  

of sale.  

This publication supersedes & replaces all information previously supplied. For additional information, please visit our website  

http://

, or consult your nearest Yangjie’s sales office for further assistance.  

6 / 6  

S-E043  

Rev.3.0,15-Feb-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.