Yangzhou-Yangjie-Elec-Tech-YJL3139KDW

RoHS  

COMPLIANT  

YJL3139KDW  

P-Channel Enhancement Mode Field Effect Transistor  

Product Summary  

● V

DS  

-20V  

● I

D  

-0.65A  

● R

DS(ON)

( at V

GS

=-4.5V)  

● R

DS(ON)

( at V

GS

=-2.5V)  

＜

520 mohm  

＜

750 mohm  

● ESD Protected Up to 4.5KV (HBM)  

General Description  

● Trench Power LV MOSFET technology  

● High Density Cell Design for Low R

DS(ON)  

● High Speed switching  

Applications  

● Interfacing, Logic switch  

● Load switch  

● Power management  

Absolute Maximum Ratings

(T =25

℃

unless  

■

A

otherwise noted)  

Parameter  

Symbol  

Maximum  

-20  

Unit  

V

Drain-source Voltage  

Gate-source Voltage  

Drain Current  

V

DS  

V

GS  

±

12  

V

T

A

=25

℃

Steady State  

T

A

=70

℃

Steady State  

-0.65  

-0.52  

I

D  

A

Pulsed Drain Current

A  

I

DM  

-2.6  

0.2  

A

Total Power Dissipation @ T

A

=25

℃

Steady State  

Thermal Resistance Junction-to-Ambient @ Steady State

B  

Junction and Storage Temperature Range  

P

D  

W

R

θJA  

625  

℃

/

W  

℃

T

J

,T

STG  

-55

～

+150  

Ordering Information

(Example)  

■

PACKING  

PREFERED P/N  

MINIMUM  

PACKAGE(pcs)  

INNER BOX  

QUANTITY(pcs)  

OUTER CARTON  

QUANTITY(pcs)  

Marking  

DELIVERY MODE  

CODE  

YJL3139KDW  

F2  

39K  

3000  

30000  

120000  

7“ reel  

1 / 6  

S-E071  

Rev.3.0,14-Sep-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

YJL3139KDW  

Electrical Characteristics

(T =25

℃

unless otherwise noted)  

■

J

Parameter  

Symbol  

Conditions  

Min  

Typ  

Max  

Units  

Static Parameter  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

=-250μA  

V

DS

=-20V,V

GS

=0V,T

C

=25

℃  

V

GS

=

±

10V, V

DS

=0V  

V

GS

=

±

8V, V

DS

=0V  

V

DS

= V

GS

, I

D

=-250μA  

V

GS

= -4.5V, I

D

=-0.6A  

V

GS

= -2.5V, I

D

=-0.5A  

V

GS

= -1.8V, I

D

=-0.3A  

I

S

=-0.65A,V

GS

=0V  

-20  

V

-1  

±

10  

±

2000  

-1.2  

μA  

μA  

nA  

V

±

1.5  

±

500  

-0.61  

360  

Gate-Body Leakage Current  

Gate Threshold Voltage  

I

GSS  

V

GS(th)  

-0.35  

520  

Static Drain-Source On-Resistance  

R

DS(ON)  

570  

750  

mΩ  

860  

1300  

-1.2  

Diode Forward Voltage  

Maximum Body-Diode Continuous Current  

Dynamic Parameters  

Input Capacitance  

V

SD  

I

S  

-0.8  

V

A

-0.65  

C

iss  

C

oss  

C

rss  

71  

20  

15  

Output Capacitance  

V

DS

=-10V,V

GS

=0V,f=1MHZ  

pF  

nC  

ns  

Reverse Transfer Capacitance  

Switching Parameters  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

Q

rr  

t

rr  

1.24  

0.37  

0.27  

0.97  

26  

Gate Source Charge  

V

GS

=-4.5V,V

DD

=-10V,I

D

=-0.65A  

Gate Drain Charge  

Reverse Recovery Chrage  

Reverse Recovery Time  

Turn-on Delay Time  

I

F

=-0.5A, di/dt=-20A/us  

t

D(on)  

t

r  

t

D(off)  

t

f  

4

Turn-on Rise Time  

19  

V

GS

=-4.5V,V

DD

=-10V, R

L

=2.5Ω,  

R

GEN

=3Ω  

Turn-off Delay Time  

16  

Turn-off Fall Time  

25  

A. Pulse

 

Test: Pulse Width

≤

300us,Duty cycle

≤

2%.  

B. Device

 

mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.  

2 / 6  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

S-E071  

Rev.3.0,14-Sep-20  

YJL3139KDW  

■ Typical Performance Characteristics  

Figure1. Output

 

Characteristics  

Figure2. Transfer

 

Characteristics  

Figure3. Capacitance

 

Characteristics  

Figure4. Gate Charge  

Figure5. Drain-Source on Resistance  

Figure6. Drain-Source on Resistance  

3 / 6  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

S-E071  

Rev.3.0,14-Sep-20  

YJL3139KDW  

Figure7. Safe Operation Area  

Figure8. Switching wave  

4 / 6  

S-E071  

Rev.3.0,14-Sep-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

YJL3139KDW  

■

SOT-363 Package

 

information  

5 / 6  

S-E071  

Rev.3.0,14-Sep-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

YJL3139KDW  

Disclaimer  

The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the  

right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design  

or otherwise.  

The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with  

equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as  

medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety  

devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use  

of sale.  

This publication supersedes & replaces all information previously supplied. For additional information, please visit our website  

http://

, or consult your nearest Yangjie’s sales office for further assistance.  

6 / 6  

S-E071  

Rev.3.0,14-Sep-20  

Yangzhou Yangjie Electronic Technology Co., Ltd.