Yangzhou-Yangjie-Elec-Tech-YJL3401A

RoHS  

COMPLIANT  

YJL3401A  

P-Channel Enhancement Mode Field Effect Transistor  

Product Summary  

●

V

DS  

-30V  

●

I

D  

-4.4A  

●

R

DS(ON)

( at V

GS

=-10V)  

●

R

DS(ON)

( at V

GS

=-4.5V)  

●

R

DS(ON)

( at V

GS

=-2.5V)  

＜

55 mohm  

＜

68 mohm  

＜

96 mohm  

General Description  

●

Trench Power LV MOSFET technology  

●

High density cell design for Low R

DS(ON)  

●

High Speed switching  

Applications  

●

Battery protection  

●

Load switch  

●

Power management  

Absolute Maximum Ratings

(T =25

℃

unless otherwise noted)  

■

A

Parameter  

Symbol  

Maximum  

-30  

Unit  

V

Drain-source Voltage  

Gate-source Voltage  

Drain Current  

V

DS  

V

GS  

±

12  

V

T

A

=25

℃

@ Steady State  

T

A

=70

℃

@ Steady State  

-4.4  

-3.5  

I

D  

A

Pulsed Drain Current

A  

Total Power Dissipation @ T

A

=25

℃  

I

DM  

-27  

1.2  

A

P

D  

W

Thermal Resistance Junction-to-Ambient @ Steady State

B  

Junction and Storage Temperature Range  

R

θ

JA  

105  

℃

/

W  

℃

T

J

,T

STG  

-55

～

+150  

Ordering Information

(Example)  

■

PACKING  

PREFERED P/N  

MINIMUM  

PACKAGE(pcs)  

INNER BOX  

QUANTITY(pcs)  

OUTER CARTON  

QUANTITY(pcs)  

Marking  

DELIVERY MODE  

CODE  

YJL3401A  

F2  

3401.  

3000  

30000  

120000  

7“

reel  

1 / 6  

S-S1974  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

Rev.2.0,25-Dec-18  

YJL3401A  

Electrical Characteristics

(T =25

℃

unless otherwise noted)  

■

J

Parameter  

Symbol  

Conditions  

Min  

Typ  

Max  

Units  

Static Parameter  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

BV

DSS  

V

GS

= 0V, I

D

=-250

μA  

V

DS

=-30V,V

GS

=0V,T

C

=25

℃  

V

GS

=

±

12V, V

DS

=0V  

V

DS

= V

GS

, I

D

=-250

μA  

V

GS

= -10V, I

D

=-4.4A  

V

GS

= -4.5V, I

D

=-4A  

-30  

V

I

DSS  

-1  

±

100  

-1.4  

55  

μA  

nA  

V

I

GSS  

V

GS(th)  

-0.6  

-0.9  

45.5  

52  

Static Drain-Source On-Resistance  

R

DS(ON)  

68  

mΩ  

V

GS

= -2.5V, I

D

=-2A  

64  

96  

Diode Forward Voltage  

Maximum Body-Diode Continuous Current  

Dynamic Parameters  

Input Capacitance  

V

SD  

I

S

=-4.4A,V

GS

=0V  

-0.8  

-1.2  

-4.4  

V

A

I

S  

C

iss  

C

oss  

C

rss  

680  

105  

68  

Output Capacitance  

V

DS

=-15V,V

GS

=0V,f=1MHZ  

pF  

Reverse Transfer Capacitance  

Switching Parameters  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

t

D(on)  

t

r  

7.2  

1.2  

1.6  

15  

Gate Source Charge  

Gate Drain Charge  

V

GS

=-10V,V

DS

=-15V,I

D

=-4.4A  

nC  

Turn-on Delay Time  

Turn-on Rise Time  

63  

V

GS

=-10V,V

DD

=-15V,R

L

=15

Ω

, I

D

=-1A,  

R

GEN

=2.5

Ω  

ns  

Turn-off Delay Time  

t

D(off)  

21  

Turn-off Fall Time  

t

f  

12  

A. Pulse

 

Test: Pulse Width

≤

300us,Duty cycle

≤

2%.  

B. Device

 

mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.  

2 / 6  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

S-S1974  

Rev.2.0,25-Dec-18  

YJL3401A  

■

Typical Performance Characteristics  

Figure1. Output

 

Characteristics  

Figure2. Transfer

 

Characteristics  

Figure3. Capacitance

 

Characteristics  

Figure4. Gate Charge  

Figure5. Drain-Source on Resistance  

Figure6. Drain-Source on Resistance  

3 / 6  

S-S1974  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

Rev.2.0,25-Dec-18  

YJL3401A  

Figure7. Safe Operation Area  

Figure8. Switching wave  

4 / 6  

S-S1974  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

Rev.2.0,25-Dec-18  

YJL3401A  

■

SOT-23 Package

 

information  

■

SOT-23 Suggested Pad Layout  

5 / 6  

S-S1974  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

Rev.2.0,25-Dec-18  

YJL3401A  

Disclaimer  

The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the  

right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design  

or otherwise.  

The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with  

equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as  

medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety  

devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use  

of sale.  

This publication supersedes & replaces all information previously supplied. For additional information, please visit our website  

http://

, or consult your nearest Yangjie’s sales o

ffice for further assistance.  

6 / 6  

S-S1974  

Yangzhou Yangjie Electronic Technology Co., Ltd.  

Rev.2.0,25-Dec-18