Yangzhou-Yangjie-Elec-Tech-YJM04N10A
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RoHS
COMPLIANT
YJM04N10A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
100V
● I
D
4.0A
● R
DS(ON)
( at V
GS
= 10V)
＜
110mohm
● R
DS(ON)
( at V
GS
= 4.5V)
＜
120mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low R
DS(ON)
Applications
● DC-DC Converters
● Power management functions
Absolute Maximum Ratings
(T =25
℃
unless otherwise noted)
■
A
Parameter
Symbol
Limit
100
Unit
V
Drain-source Voltage
Gate-source Voltage
Drain Current
V
DS
V
GS
±
20
V
T
A
=25
℃
T
A
=70
℃
4
I
D
A
3.2
Pulsed Drain Current
A
Total Power Dissipation @ T
A
=25
℃
I
DM
16
2.5
A
P
D
W
Thermal Resistance Junction-to-Ambient
B
Thermal Resistance Junction-to-Case
Junction and Storage Temperature Range
R
θJA
R
θJC
T
J
,T
STG
50
℃
/
W
℃
/
W
℃
16
-55
～
+150
Ordering Information
(Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJM04N10A
F2
1004
2500
/
40000
7“ reel
1 / 7
S-E638
Rev.3.0,18-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJM04N10A
Electrical Characteristics
(T =25
℃
unless otherwise noted)
■
J
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
V
GS
= 0V, I
D
=250μA
V
DS
=100V,V
GS
=0V
V
GS
=
±
20V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
= 10V, I
D
=4A
100
V
I
DSS
1
±
100
3.0
μA
nA
V
I
GSS
V
GS(th)
1.1
1.8
95
110
120
1.2
Static Drain-Source On-Resistance
R
DS(ON)
mΩ
V
GS
= 4.5V, I
D
=3.2A
I
S
=4A,V
GS
=0V
100
0.8
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Dynamic Parameters
Input Capacitance
V
SD
V
A
I
S
4
C
iss
C
oss
C
rss
1070
33
Output Capacitance
V
DS
=50V,V
GS
=0V,f=1MHZ
pF
nC
ns
Reverse Transfer Capacitance
Switching Parameters
T
o
tal Gate Charge
30
Q
g
Q
gs
Q
gd
Q
rr
t
rr
26
5.4
5.8
30.1
40
Gate-Source Charge
Gate-Drain Charge
V
GS
=10V,V
DS
=50V,I
D
=10A
Reverse Recovery Charge
Reverse Recovery Time
Turn-on Delay Time
I
F
=10A, di/dt=100A/us
t
D(on)
7
Turn-on Rise Time
t
r
24
V
GS
=10V,V
DD
=50V,R
L
=6.4Ω
R
GEN
=3Ω
Turn-off Delay Time
t
D(off)
24
Turn-off fall Time
t
f
31
A. Pulse
Test: Pulse Width
≤
300us,Duty cycle
≤
2%.
R
B.
θJA
is the sum of the junction-to-lead and lead-to-ambient thermal resistance, where the lead thermal reference is defined as the solder
R
R
mounting surface of the drain pins.
θJL
is guaranteed by design, while
θJA
is determined by the board design. The maximum rating presented here
is based on mounting on a 1 in 2
pad of 2oz copper.
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S-E638
Rev.3.0,18-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJM04N10A
■ Typical Performance Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance vs. Junction Temperature
Figure 6. Gate Charge
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 5. Capacitance Characteristics
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-E638
Rev.3.0,18-Feb-20
YJM04N10A
Figure 7. Safe Operation Area
Figure 8. Maximum Continuous Drain Current
vs Ambient Temperature
Figure 9. Normalized Maximum Transient Thermal Impedance
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S-E638
Rev.3.0,18-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJM04N10A
Resistive Switching Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
5 / 7
S-E638
Rev.3.0,18-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJM04N10A
■
SOT-223 Package
information
6 / 7
S-E638
Rev.3.0,18-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJM04N10A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
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S-E638
Rev.3.0,18-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
