Yangzhou-Yangjie-Elec-Tech-YJM05N06A
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RoHS
CO
M
PLIANT
YJM05N06A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
60V
● I
D
5.0A
● R
DS(ON)
( at V
GS
= 10V)
＜
44mohm
● R
DS(ON)
( at V
GS
= 4.5V)
＜
49mohm
General Description
● Trench Power
MV MOSFET technology
●
High density cell design for Low R
D
S
(ON)
●
High Speed switching
● Moisture Sensitivity Level 3
●
Epoxy Meets UL 94 V-0 Flammability Rating
●
Halogen Free
Applications
●
Battery protection
●
Load switch
●
Power management
Absolute Maximum Ratings
(T =25
℃
unless otherwise noted)
■
A
Parameter
Symbol
Maximum
Unit
V
Drain-source Voltage
G
a
te-source Voltage
V
DS
60
±
20
5.0
V
GS
V
T
A
=25
℃
@ Steady State
T
A
=70
℃
@ Steady State
Drain Current
I
D
A
4.0
Pulsed Drain Current
A
I
DM
P
D
25
A
W
2.5
T
o
tal Power Dissipation @ T
A
=25
℃
T
h
ermal Resistance Junction-to-Ambient @ Steady State
B
Junction and Storage Temperature Range
R
θ
JA
50
℃
/
W
℃
T
J
,
T
STG
-55
～
+150
Ordering Information
(Example)
■
PACKING
PREFERED P/N
MI
N
I
M
UM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJM05N06A
F2
6005
2500
/
40000
13“
reel
1 / 7
S-E628
Rev.3.1,07-Mar-22
Yangzh
o
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Y
angjie Electronic Technology Co., Ltd.
YJM05N06A
Electrical Characteristics
(T =25
℃
unless otherwise noted)
■
J
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
G
a
te-Body Leakage Current
G
a
te Threshold Voltage
BV
DSS
I
DSS
V
GS
= 0V, I
D
=250μA
V
DS
=60V,V
GS
=0V
V
GS
= ±20V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
= 10V, I
D
=5.0A
V
GS
= 4.5V, I
D
=4.0A
I
S
=5.0A,V
GS
=0V
60
V
μA
nA
V
1
±100
2.5
44
I
GSS
V
GS(th)
1.0
1.5
35
Static Drain-Source On-Resistance
R
DS(
O
N
)
mΩ
39
49
Diode Forward Voltage
M
a
x
i
m
u
m Body-Diode Continuous Current
Dynamic Parameters
Input Capacitance
V
SD
I
S
0.8
1.2
5.0
V
A
C
iss
C
oss
C
rss
1018
70
O
u
tput Capacitance
V
DS
=30V,V
GS
=0V,f=1MHZ
pF
nC
ns
R
e
verse Transfer Capacitance
Switching Parameters
T
o
tal Gate Charge
62
Q
g
26
5.4
6.5
11.7
23
G
a
te Source Charge
Q
g
s
Q
gd
V
GS
=10
V
,
V
DS
=30
V
,
I
D
=10A
I
F
=20A, di/dt=500A/us
G
a
te Drain Charge
R
e
verse Recovery Charge
R
e
verse Recovery Time
Turn-on Delay T
i
m
e
Q
rr
t
rr
t
D
(
on)
t
r
10
Turn-on Rise T
i
m
e
20
V
GS
=10V,V
DD
=30V, I
D
=2A,
R
G
E
N
=3
Ω
Turn-off Delay T
i
m
e
t
D
(
off)
t
f
29
Turn-off Fall Time
21
A. Pulse
Test: Pulse Width
≤
300us,Duty cycle
≤
2%.
R
θ
JA
is the sum of the junction-to-lead and lead
–
t
o-ambient thermal resistance, where the lead thermal reference is defined as the solder
B.
R
θ
JL
is guaranteed by design, wh
i
l
e
R
θ
JA
is determined by the board design. The maximum rating presented here
mounting surface of the drain pins.
is based on mounting on a 1 in 2
pad of 2oz copper.
2 / 7
S-E628
Rev.3.1,07-Mar-22
Yangzh
o
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Y
angjie Electronic Technology Co., Ltd.
YJM05N06A
■
T
y
pical Performance Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance vs. Junction Temperature
Figure 6. Gate Charge
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 5. Capacitance Characteristics
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Yangzh
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angjie Electronic Technology Co., Ltd.
S-E628
Rev.3.1,07-Mar-22
YJM05N06A
Figure 7. Safe Operation Area
Figure 8. Maximum Continuous Drain Current
vs Ambient Temperature
Figure 9. Normalized Maximum Transient Thermal Impedance
4 / 7
S-E628
Rev.3.1,07-Mar-22
Yangzh
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Y
angjie Electronic Technology Co., Ltd.
YJM05N06A
Resistive Switching Test Circuit & Waveforms
Diode Recovery
T
e
st Circuit & Waveforms
Gate Charge
T
e
st Circuit & Waveform
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
5 / 7
S-E628
Rev.3.1,07-Mar-22
Yangzh
o
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Y
angjie Electronic Technology Co., Ltd.
YJM05N06A
■
SOT-223-B Package
information
θ
SIDE VIEW
TOP VIEW
θ
NOTE:
1.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND
GATE BURRS.
2.TOLERANCE 0.1mm UNLESS OTHERWISE
SPECIFIED.
SIDE VIEW
3.THE PAD LAYOUT IS FOR REFERENCE PURPOSES
ONLY.
UNIT
：
mm
SUGGESTED SOLDER PAD LAYOUT
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Yangzh
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Y
angjie Electronic Technology Co., Ltd.
S-E628
Rev.3.1,07-Mar-22
YJM05N06A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves
t
h
e
right to make changes without notice for the specification of the products displayed h
e
r
ein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
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S-E628
Rev.3.1,07-Mar-22
Yangzh
o
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Y
angjie Electronic Technology Co., Ltd.
