Yangzhou-Yangjie-Elec-Tech-YJQ10N02A
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RoHS
COMPLIANT
YJQ10N02A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
20V
● I
D
13A
● R
DS(ON)
( at V
GS
=4.5V)
● R
DS(ON)
( at V
GS
=2.5V)
● R
DS(ON)
( at V
GS
=1.8V)
● 100%
▽
V
DS
Tested
＜
9mohm
＜
12mohm
＜
18.5mohm
General Description
● Trench Power LV MOSFET technology
● High density cell design for Low R
DS(ON)
● High Speed switching
DFN2020-6L
Applications
● Battery protection
● Load switch
● Power management
Absolute Maximum Ratings
(T =25
℃
unless otherwise noted)
■
A
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
V
DS
V
GS
20
V
V
±
10
T
A
=25
℃
13
Drain Current
I
D
A
T
A
=70
℃
8
32
Pulsed Drain Current
A
Total Power Dissipation
I
DM
A
W
T
A
=25
℃
T
A
=70
℃
2.2
P
D
1.4
W
Thermal Resistance Junction-to-Ambient
B
Junction and Storage Temperature Range
R
θJA
57
℃
/
W
℃
T
J
,T
STG
-55
～
+150
Ordering Information
(Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJQ10N02A
F1
Q10N02
3000
30000
120000
7“ reel
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S-E006
Rev.3.0,25-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJQ10N02A
Electrical Characteristics
(T =25
℃
unless otherwise noted)
■
J
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
V
GS
=0V, I
D
=250μA
V
DS
=20V,V
GS
=0V
V
GS
=
±
10V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
=4.5V, I
D
=13A
V
GS
=2.5V, I
D
=6.5A
V
GS
=1.8V, I
D
=4A
I
S
=13A,V
GS
=0V
20
V
I
DSS
1
±
100
1.0
9
μA
nA
V
I
GSS
V
GS(th)
0.45
0.62
7.8
9.5
12
Static Drain-Source On-Resistance
R
DS(ON)
12
mΩ
V
18.5
1.2
Diode Forward Voltage
Dynamic Parameters
Input Capacitance
V
SD
C
iss
C
oss
C
rss
888
133
117
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
T
o
tal Gate Charge
V
DS
=10V,V
GS
=0V,f=1MHZ
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
11.05
1.73
3.1
7
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
V
GS
=4.5
V
,
V
DS
=10
V
,
I
D
=6.8A
nC
46
V
GS
=4.5V, V
DS
=10V, I
D
=6.8A
R
GEN
=3Ω
ns
Turn-off Delay Time
Turn-off fall Time
t
D(off)
30
t
f
52
A. Pulse
Test: Pulse Width
≤
300us,Duty cycle
≤
2%.
R
B.
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
R
R
mounting surface of the drain pins.
θJC
is guaranteed by design, while
θJA
is determined by the board design. The maximum rating presented
here is based on mounting on a 1 in 2
pad of 2oz copper.
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S-E006
Rev.3.0,25-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJQ10N02A
■ Typical Performance Characteristics
Figure1. Output
Characteristics
Figure2. Transfer
Characteristics
Figure 3: On-Resistance vs. Drain Current
and Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
Figure5. Capacitance
Characteristics
Figure6. Gate Charge
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-E006
Rev.3.0,25-Feb-20
YJQ10N02A
Figure7. Safe Operation Area
Figure8. Maximum Continuous Drain Current
vs Ambient Temperature
Figure9. Normalized Maximum Transient Thermal Impedance
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S-E006
Rev.3.0,25-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJQ10N02A
Resistive Switching Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
5 / 7
S-E006
Rev.3.0,25-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJQ10N02A
■
DFN2020-6L Package
information
6 / 7
S-E006
Rev.3.0,25-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJQ10N02A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
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S-E006
Rev.3.0,25-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
