Yangzhou-Yangjie-Elec-Tech-YJQ40G10A
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RoHS
COMPLIANT
YJQ40G10A
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
100V
● I
D
40A
● R
DS(ON)
( at V
GS
=10V)
● R
DS(ON)
( at V
GS
=4.5V)
● 100% UIS Tested
● 100%
▽
V
DS
Tested
＜
18.5 mohm
＜
22.5 mohm
General Description
● Split gate trench
MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low R
DS(ON)
Applications
● Consumer electronic power supply
● Motor control
● Synchronous-rectification
● Isolated DC/DC convertor
● Invertors
Absolute Maximum Ratings
(T =25
℃
unless otherwise noted)
■
A
Parameter
Symbol
Limit
100
Unit
V
Drain-source Voltage
Gate-source Voltage
V
DS
V
GS
±
20
40
V
Tc=25
℃
Drain Current
I
D
A
Tc=100
℃
25.3
160
Pulsed Drain Current
A
Avalanche energy
B
I
DM
A
E
AS
81
mJ
Tc=25
℃
54
Total Power Dissipation
C
P
D
W
Tc=100
℃
21
Junction and Storage Temperature Range
T
J
,T
STG
-55
～
+150
℃
■
Thermal resistance
Parameter
Symbol
R
θJA
Typ
25
Max
30
Units
Thermal Resistance Junction-to-Ambient
D
Thermal Resistance Junction-to-Ambient
D
Thermal Resistance Junction-to-Case
t
≤
10S
Steady-State
Steady-State
50
60
℃
/W
R
θJC
1.8
2.3
Ordering Information
(Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJQ40G10A
F1
Q40G10A
5000
10000
100000
13“ reel
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S-E412
Rev.3.0,20-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJQ40G10A
Electrical Characteristics
(T =25
℃
unless otherwise noted)
■
J
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
= 0V, I
D
=250μA
V
DS
=100V,V
GS
=0V
V
GS
=
±
20V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
I
S
=20A,V
GS
=0V
100
V
1
±
100
2.5
μA
nA
V
I
GSS
V
GS(th)
1.0
1.8
15
18
18.5
22.5
1.3
Static Drain-Source On-Resistance
R
DS(ON)
mΩ
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Gate resistance
V
SD
I
S
V
A
Ω
40
R
G
f=1MHz, Open drain
1
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
1051
399
18
Output Capacitance
V
DS
=50V,V
GS
=0V,f=1MHZ
pF
nC
ns
Reverse Transfer Capacitance
Switching Parameters
T
o
tal Gate Charge
Q
g
Q
gs
Q
gd
Q
rr
t
rr
16
5.6
Gate-Source Charge
Gate-Drain Charge
V
GS
=10V,V
DS
=50V,I
D
=25A
I
F
=20A, di/dt=100A/us
2.4
Reverse Recovery Chrage
Reverse Recovery Time
Turn-on Delay Time
42
39.8
39.2
11
t
D(on)
t
r
t
D(off)
t
f
Turn-on Rise Time
V
GS
=10V,V
DD
=50V,I
DS
=25A
R
GEN
=2.2Ω
Turn-off Delay Time
53.2
15.8
Turn-off fall Time
A. Repetitive
rating; pulse width limited by max. junction temperature.
B. V
DD
=50V, R
G
=25Ω, L=0.5mH.
C. Pd
is based on max. junction temperature, using junction-case thermal resistance.
D. The
value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25
°
C. The
Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150
°
C. The value in any given
application depends on the user’s specific board design.
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S-E412
Rev.3.0,20-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJQ40G10A
■ Typical Performance Characteristics
Figure1. Output
Characteristics
Figure2. Transfer
Characteristics
Figure3. Capacitance
Characteristics
Figure4. Gate Charge
Figure5.
:
On-Resistance vs. Gate to Source Voltage
Figure6.Normalized On-Resistance
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-E412
Rev.3.0,20-Feb-20
YJQ40G10A
Figure7. Drain current
Figure8.Safe Operation Area
Figure9.Normalized Maximum Transient thermal impedance
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S-E412
Rev.3.0,20-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJQ40G10A
■
DFN3.3×3.3 Package
information
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S-E412
Rev.3.0,20-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJQ40G10A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
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S-E412
Rev.3.0,20-Feb-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
