Yangzhou-Yangjie-Elec-Tech-YJS4409A
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RoHS
COMPLIANT
YJS4409A
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● V
DS
-30V
● I
D
-18A
● R
DS(ON)
( at V
GS
=-20V)
● R
DS(ON)
( at V
GS
=-10V)
● R
DS(ON)
( at V
GS
=-4.5V)
＜
5.5mohm
＜
6.0mohm
＜
10mohm
General Description
● Trench Power LV MOSFET technology
● High density cell design for Low R
DS(ON)
● High Speed switching
Applications
● Battery protection
● Power management
● Load switch
Absolute Maximum Ratings
(T =25
℃
unless otherwise noted)
■
A
Parameter
Symbol
Maximum
-30
Unit
V
Drain-source Voltage
V
DS
Gate-source Voltage
V
GS
±
25
V
T
A
=25
℃
@ Steady State
T
A
=70
℃
@ Steady State
-18
Drain Current
I
D
A
-14.4
Pulsed Drain Current
A
Single Pulse Avalanche Energy
B
Total Power Dissipation @ T
A
=25
℃
I
DM
-72
136
A
E
AS
mJ
W
C
P
D
3.4
Thermal Resistance Junction-to-Ambient @ Steady State
D
Junction and Storage Temperature Range
R
θJA
36.7
℃
/
W
℃
T
J
,T
STG
-55
～
+150
Ordering Information
(Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
YJS4409A
F2
Q4409
4000
8000
64000
13“ reel
1 / 7
S-E650
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJS4409A
Electrical Characteristics
(T =25
℃
unless otherwise noted)
■
J
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
V
GS
= 0V, I
D
=-250μA
V
DS
=-30V,V
GS
=0V,T
C
=25
℃
V
GS
=
±
25V, V
DS
=0V
V
DS
= V
GS
, I
D
=-250μA
V
GS
= -20V, I
D
=-18A
V
GS
= -10V, I
D
=-15A
V
GS
= -6V, I
D
=-10A
-30
V
I
DSS
-1
±
100
-2.5
5.5
μA
nA
V
I
GSS
V
GS(th)
-1.0
-1.5
4.5
5.1
7.0
7.5
-0.8
6.0
Static Drain-Source On-Resistance
R
DS(ON)
mΩ
8.5
V
GS
= -4.5V, I
D
=-10A
I
S
=-18A,V
GS
=0V
10
Diode Forward Voltage
Dynamic Parameters
Input Capacitance
V
SD
-1.2
V
C
iss
C
oss
C
rss
4850
674
Output Capacitance
V
DS
=-15V,V
GS
=0V,f=1MHZ
pF
Reverse Transfer Capacitance
Switching Parameters
Total Gate Charge
624
Q
g
Q
gs
Q
gd
Q
rr
t
rr
77.2
13.5
17.3
14.0
30
Gate Source Charge
Gate Drain Charge
V
GS
=-10V,V
DS
=-15V,I
D
=-12A
nC
Reverse Recovery Charge
Reverse Recovery Time
Turn-on Delay Time
Turn-on Rise Time
I
F
= -12A, di/dt=100A/us
t
D(on)
16
t
r
21
ns
V
GS
=-10V,V
DD
=-15V, I
D
=-1A,
R
GEN
=2.5Ω
Turn-off Delay Time
Turn-off Fall Time
t
D(off)
105
64
t
f
A. Pulse
Test: Pulse Width
≤
300us,Duty cycle
≤
2%.
R
B.
θJA
is the sum of the junction-to-lead and lead-to-ambient thermal resistance, where the lead thermal reference is defined as the solder
R
R
mounting surface of the drain pins.
θJL
is guaranteed by design, while
θJA
is determined by the board design. The maximum rating presented here
is based on mounting on a 1 in 2
pad of 2oz copper.
2 / 7
S-E650
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJS4409A
■ Typical Performance Characteristics
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance vs. Junction Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge
3 / 7
S-E650
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJS4409A
Figure 7. Safe Operation Area
Figure 8. Maximum Continuous Drain Current
vs Ambient Temperature
Figure 9. Normalized Maximum Transient Thermal Impedance
4 / 7
S-E650
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJS4409A
Resistive Switching Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
5 / 7
S-E650
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJS4409A
■
SOP-8 Package
information
6 / 7
S-E650
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
YJS4409A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
7 / 7
S-E650
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
