YFW-YFW10N65AF
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YFW10N65AT/AF/AS
650V N-CHANNEL
ENHANCEMENT MODE
MOSFET
MAIN CHARACTERISTICS
I
D
V
DSS
10A
650V
R
DSON
-typ(@V
GS
=10V)
＜
0.9Ω
(Type:0.75Ω)
TO-220F
TO-220AB
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
TO-263
Product Specification Classification
Part Number
YFW10N65AT
YFW10N65AF
YFW10N65AS-R
Package
Marking
Pack
TO-220AB
TO-220F
TO-263
YFW 10N65AT XXXXX
YFW 10N65AF XXXXX
YFW 10N65AS XXXXX
1000PCS/Tape
1000PCS/Tape
800PCS/Tube
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Drain-Source Voltage (V
GS
= 0V)
Symbols
Value
Units
650
10
V
DS
I
D
V
A
Continuous Drain Current
Pulsed Drain Current(note1)
58
I
DM
A
Gate – Source Voltage
±
30
426
V
GS
E
AS
V
Single Pulse Avalanche Energy(note2)
Avalanche Current(note1)
mJ
A
9
I
AR
Repetitive Avalanche Energy(note1)
Power Dissipation(T
C
=25
℃
)
41
E
AR
P
D
mJ
W
32.1
-55 to +150
4.46
46.7
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction ambient
T
J
,T
STG
R
θJC
R
θJA
°C
°C/W
°C/W
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
1 / 6
YFW10N65AT/AF/AS
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage
Test Condition
V
GS
=0V, I
D
=250uA
V
DS
=650V , V
GS
=0V , T
J
= 25
℃
V
GS
=±30V
Symbols
V(BR)DSS
I
DSS
Min
Typ
685
–
Max
Units
V
650
–
–
–
1
μA
nA
V
–
I
GSS
±
100
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Input Capacitance
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=3.5A
2.0
–
–
4
V
GS(th)
R
DS(ON)
C
iss
0.75
1037
138
5.3
19
7.3
8.5
18
30
61
36
–
0.9
Ω
–
–
V
DS
=25V
V
GS
=0V
f=1MHz
Output Capacitance
–
–
C
oss
C
rss
P
F
Reverse Transfer Capacitance
Total Gate Charge
–
–
–
–
Q
g
V
DD
=520V
I
D
=9A
V
GS
=10V
Gate-Source Charge
–
–
Q
gs
nC
Gate-Drain Charge
–
–
Q
gd
Turn-on delay time
–
–
–
t
d(on)
T
r
t
d(OFF)
t
f
V
DD
=325V
I
D
=7A
R
G
=25Ω
Turn-on Rise Time
–
ns
Turn-Off Delay
Time
–
–
Turn-on Fall Time
–
–
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
–
9.0
36
1.2
–
I
S
A
A
T
C
=25
℃
–
–
I
SM
–
–
T
J
= 25ºC, I
SD
= 7A, V
GS
= 0V
V
SD
V
Reverse Recovery Time
–
431
2.6
t
rr
nS
uC
V
GS
= 0V,I
S
= 7A
diF/dt =100A /μs
Reverse Recovery Charge
Notes
–
–
Q
rr
1
、
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2
、
The EAS data shows Max. rating . IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC
3
、
The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
4
、
The power dissipation is limited by 150
℃
junction temperature
5
、
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
2 / 6
YFW10N65AT/AF/AS
Ratings and Characteristic Curves
Typical Characteristics
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
3 / 6
YFW10N65AT/AF/AS
Ratings and Characteristic Curves
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
4 / 6
YFW10N65AT/AF/AS
Package Outline Dimensions Millimeters
TO-220AB
Dim.
A
B
C
D
E
Min.
10.15
2.65
3.70
28.5
1.30
6.35
2.9
15.0
0.38
4.45
1.25
Max.
10.35
2.95
3.90
29.5
1.45
6.55
3.3
16.0
0.42
4.55
1.35
F
G
H
I
J
K
L
Typ 5.08
Typ 2.54
M
N
O
3.1
0.76
3.3
0.84
All Dimensions in millimeter
TO-220F
Dim.
A
B
C
D
E
Min.
9.95
2.95
1.25
12.95
0.50
3.1
Max.
10.25
3.25
1.45
13.25
0.65
3.3
F
G
H
I
1.30
1.45
Typ 2.54
Typ 5.08
J
K
L
M
N
O
P
4.60
2.50
6.35
15.4
2.75
0.48
0.76
4.75
2.65
6.55
16.0
3.05
0.52
0.84
All Dimensions in millimeter
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
5 / 6
YFW10N65AT/AF/AS
Package Outline Dimensions Millimeters
TO-263
Dim.
A
B
Min.
10.1
7.4
Max.
10.2
7.6
C
D
E
1.3
0.55
5.0
1.5
0.75
6.0
F
1.4
1.6
G
H
I
0.78
1.2
0.86
1.3
Typ2.54
J
K
L
M
N
O
8.4
4.45
1.25
0.02
2.4
8.6
4.55
1.35
0.1
2.8
0.40
0.36
All Dimensions in millimeter
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
6 / 6
