YFW-YFW10N80AF

YFW10N80AF/AP/APS  

800V N-CHANNEL ENHANCEMENT MODE MOSFET  

MAIN CHARACTERISTICS  

I

D  

V

DSS  

10A  

800V  

R

DSON

-typ(@V

GS

=10V)  

<1.15Ω

(Type:0.92 Ω)  

FEATURES  











Fast Switching  

Low ON Resistance  

Low Gate Charge  

100% Single Pulse avalanche energy Test  

LeadfreeincomplywithEURoHS2011/65/EUdirectives  

TO-220F  

TO-247  

MECHANICAL DATA  









Case: Molded plastic  

Mounting Position: Any  

Molded Plastic: UL Flammability Classification Rating 94V-0  

Solder bath temperature275

℃

maximum,10s per JESD22-106  

TO-247S  

PRODUCT SPECIFICATION CLASSIFICATION  

Part Number  

YFW10N80AF  

YFW10N80AP  

YFW10N80APS  

Package  

TO-220F(1.3 mm)  

TO-247  

Marking  

Pack  

50PCS/Tube  

30PCS/Tube  

30PCS/Tube  

YFW 10N80AF XXXXX  

YFW 10N80AP XXXXX  

YFW 10N80APS XXXXX  

TO-247S  

GuangDong YFW Electronics Co, Ltd.  

1 / 6  

YFW10N80AF/AP/APS  

Maximum Ratings at Tc=25°C unless otherwise specified  

Value  

Characteristics  

Symbols  

Units  

220F  

247/247S  

Drain-Source Voltage  

Gate-Source Voltage  

800  

±30  

10  

V

DS  

GS  

V

V

V

Continue Drain Current-Continuous (TC = 25°C)  

-Continuous (TC = 100°C)  

I

D

A

6

Pulsed Drain Current (Note1)  

Power Dissipation  

40  

I

DM  

A

W

60  

160  

P

D

-Derate above 25°C  

0.5  

1.33  

W/°C  

mJ  

A

Single Pulse Avalanche Energy (Note2)  

Avalanche Current (Note 1)  

700  

10  

E

AS  

I

AR  

Repetitive Avalanche Energy (Note 1)  

Operating Temperature Range  

Storage Temperature Range  

24  

E

AS  

m

J  

150  

T

J

°C  

-55 to +150  

T

STG  

°C  

Thermal Resistance, Junction to Case  

Thermal Resistance, Junction to Ambient  

2.08  

62.5  

0.78  

45  

R

θJC  

θJA  

°C/W  

°C/W  

R

Maximum Ratings at Tc=25°C unless otherwise specified  

Characteristics  

Test Condition  

V

GS

= 0 V,I

D

= 250 μA  

V

DS

= 800 V, V

GS

= 0 V  

V

DS

= 640 V, T

c

= 125

°C  

V

GS

= ± 30 V, VDS = 0 V  

V

DS

= V

GS

, I

D

= 250 μA  

V

GS

= 10 V, I

D

= 5A  

Symbols  

BV

DSS  

Min  

Typ  

–

Max  

Units  

V

Drain-Source Breakdown Voltage  

800  

–

–

–

–

2

–

–

–

–

–

–

–

–

–

–

–

–

–

1

Drain-Source Leakage Current  

I

DSS  

UA  

–

10  

Gate Leakage Current  

Gate-Source Threshold Voltage  

Drain-Source On-State Resistance  

Forward Transconductance  

Input Capacitance  

–

±100  

I

GSS  

V

GS(th)  

R

DS(on)  

gfs  

nA  

V

–

4

0.92  

20  

1979  

200  

25  

19  

10  

68  

23  

58  

13  

25  

1.15  

Ω

S

V

DS

= 40 V, I

D

= 10 A  

–

–

–

–

–

–

–

–

–

–

–

C

iss  

V

GS

= 0 V, V

DS

= 25 V,  

f = 1MHz  

Output Capacitance  

C

oss  

C

rss  

pF  

nS  

nC  

Reverse Transfer Capacitance  

Turn-on Delay Time  

td(ON)  

tr  

Rise Time  

I

D

= 10, V

DD

= 400V,  

R

G

=10Ω(Note3,4)  

Turn-Off Delay Time  

Fall Time  

td(OFF)  

tf  

Total Gate Charge  

Q

G  

I

D

=10 A, V

DD

= 640 V,  

V

GS

= 10 V(Note3,4)  

Gate to Source Charge  

Gate to Drain Charge  

Q

GS  

Q

GD  

GuangDong YFW Electronics Co, Ltd.  

2 / 6  

YFW10N80AF/AP/APS  

Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified  

Characteristics  

Maximun Body-Diode Continuous Current  

Maximun Body-Diode Pulsed

 

Current  

Drain-Source Diode Forward Voltage  

Reverse Recovery Time  

Test Condition  

Symbols  

I

S  

Min  

Typ  

Max  

10  

40  

1.5  

–

Units  

A

–

–

–

–

–

–

–

I

SM  

A

I

SD

=10A  

–

V

SD  

trr  

V

200  

2.2  

nS  

uC  

I

SD

= 10A, V

GS

= 0 V,  

dI

F

/ dt = 100 A/μs  

(Note3)  

Reverse Recovery Charge  

Note:  

–

Qrr  

1. Repetitive Rating: Pulse width limited by maximum junction temperature.  

2. IAS = 10 A, VDD = 50 V, L =14mH, RG = 25Ω, starting TJ = 25°C.  

3. ulse test: Pulse Width ≤300 µ s, Duty Cycle≤2%.  

4. Essentially Independent of Operating Temperature.  

Ratings and characteristic Curves  

GuangDong YFW Electronics Co, Ltd.  

3 / 6  

YFW10N80AF/AP/APS  

Ratings and characteristic Curves  

GuangDong YFW Electronics Co, Ltd.  

4 / 6  

YFW10N80AF/AP/APS  

Package Outline Dimensions Millimeters  

TO-220F  

Dim.  

A

B

C

D

E

Min.  

9.95  

2.95  

1.25  

12.95  

0.50  

3.1  

Max.  

10.25  

3.25  

1.45  

13.25  

0.65  

3.3  

F

G

H

I

1.30  

1.45  

Typ 2.54  

Typ 5.08  

J

K

L

M

N

O

P

4.60  

2.50  

6.35  

15.4  

2.75  

0.48  

0.76  

4.75  

2.65  

6.55  

16.0  

3.05  

0.52  

0.84  

All Dimensions in millimeter  

TO-247  

Dim.  

A

B

C

D

E

Min.  

15  

20  

41  

5

Max.  

16  

21  

42  

6

4

5

F

2.5  

1.75  

3

3.5  

2.5  

3.5  

10  

5.1  

2.1  

4

5.25  

3

0.75  

G

H

I

J

K

8

4.9  

1.9  

3.5  

4.75  

2

L

M

N

O

P

0.55  

Typ 5.08  

Q

1.2  

1.3  

All Dimensions in millimeter  

GuangDong YFW Electronics Co, Ltd.  

5 / 6  

YFW10N80AF/AP/APS  

Package Outline Dimensions Millimeters  

TO-247S  

Dim.  

A

Min.  

15  

Max.  

16  

B

19.5  

33.5  

5

3.5  

2.5  

1.75  

3

20.5  

35.5  

6

4.5  

3.5  

2.5  

4

C

D

E

F

G

H

I

9

11  

J

K

L

M

N

O

P

4.9  

1

3.75  

4.75  

1.8  

0.45  

5.1  

1.3  

4.25  

5.25  

2.2  

0.6  

Typ 5.08  

Q

1.2  

1.3  

All Dimensions in millimeter  

GuangDong YFW Electronics Co, Ltd.  

6 / 6