YFW-YFW28N50AP
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YFW28N50AP/APS
500V N-CHANNEL ENHANCEMENT MODE MOSFET
MAIN CHARACTERISTICS
I
D
V
DSS
28A
500V
R
DSON
-typ(@V
GS
=10V)
<0.18Ω
(Type:0.14Ω)
Features
Fast Switching
Low ON Resistance
Low Gate Charge
100% Single Pulse avalanche energy Test
LeadfreeincomplywithEURoHS2011/65/EUdirectives
TO-247
Mechanical Data
Case: Molded plastic
Mounting Position: Any
Molded Plastic: UL Flammability Classification Rating 94V-0
Solder bath temperature275
℃
maximum,10s per JESD22-106
TO-247S
Product Specification Classification
Part Number
YFW28N50AP
YFW28N50APS
Package
Marking
Pack
TO-247
30PCS/Tube
30PCS/Tube
YFW 28N50AP XXXXX
YFW 28N50APS XXXXX
TO-247S
GuangDong YFW Electronics Co, Ltd.
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YFW28N50AP/APS
Maximum Ratings at Tc=25°C unless otherwise specified
Value
Characteristics
Symbols
Units
247/247S
500
Drain-Source Voltage
Gate-Source Voltage
Continue Drain Current
V
DS
GS
V
V
±30
V
28
I
D
A
-Continuous (TC = 100°C)
19
Pulsed Drain Current (Note1)
Power Dissipation
100
I
DM
A
W
300
P
D
-Derate above 25°C
2.5
W/°C
mJ
A
Single Pulse Avalanche Energy (Note2)
Avalanche Current (Note 1)
1500
28
E
AS
I
AR
Repetitive Avalanche Energy (Note 1)
Operating Temperature Range
32
E
AS
mJ
°C
150
T
J
Storage Temperature Range
-55 to +150
0.42
40
T
STG
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
θJC
θJA
°C/W
°C/W
R
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Test Condition
Symbols
BV
DSS
Min
Typ
Max
Units
V
Drain-Source Breakdown Voltage
V
GS
= 0 V,I
D
= 250 μA
500
–
–
△
Breakdown Voltage Temperature
Coefficient
ID=250μA
(Referenced to 25°C)
–
0.5
–
BV
DSS
/
△
TJ
V/°C
uA
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
c
= 125
°C
V
GS
= ± 30 V, VDS = 0 V
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 14A
–
–
–
2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1
Drain-Source Leakage Current
I
DSS
10
Gate Leakage Current
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
–
±100
I
GSS
V
GS(th)
R
DS(on)
gfs
nA
V
0
4
0.14
18
0.18
Ω
S
V
DS
= 15 V, I
D
= 14 A
–
–
–
–
–
–
–
–
–
–
–
4611
225
12
C
iss
V
GS
= 0 V, V
DS
= 25 V,
f = 1MHz
Output Capacitance
C
oss
C
rss
pF
nS
nC
Reverse Transfer Capacitance
Turn-on Delay Time
37.2
64.4
86.8
46
td(ON)
tr
Rise Time
I
D
= 28, V
DD
= 250V,
R
G
=25Ω(Note3,4)
Turn-Off Delay Time
Fall Time
td(OFF)
tf
Total Gate Charge
121
20
Q
G
I
D
=28 A, V
DD
= 400 V,
V
GS
= 10 V(Note3,4)
Gate to Source Charge
Gate to Drain Charge
Q
GS
32
Q
GD
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YFW28N50AP/APS
Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified
Characteristics
Maximun Body-Diode Continuous Current
Maximun Body-Diode Pulsed
Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Test Condition
Symbols
I
S
Min
Typ
Max
25
100
1.5
–
Units
A
–
–
–
–
–
–
–
I
SM
A
I
SD
=28A
–
V
SD
trr
V
490
6.2
nS
uC
I
SD
= 28A, V
GS
= 0 V,
dI
F
/ dt = 100 A/μs
Reverse Recovery Charge
Note:
–
Qrr
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. IAS = 28 A, VDD = 50 V, L = 4mH, RG = 25Ω, starting TJ = 25°C.
3. ulse test: Pulse Width ≤300 µ s, Duty Cycle≤2%.
4. Essentially Independent of Operating Temperature.
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YFW28N50AP/APS
Ratings and Characteristic Curves
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YFW28N50AP/APS
Package Outline Dimensions Millimeters
TO-247
Dim.
A
B
C
D
E
Min.
Max.
16
21
42
6
15
20
41
5
4
5
F
2.5
1.75
3
3.5
2.5
3.5
10
G
H
I
8
J
K
L
M
N
O
P
4.9
1.9
3.5
4.75
2
5.1
2.1
4
5.25
3
0.55
0.75
Typ 5.08
Q
1.2
1.3
All Dimensions in millimeter
TO-247S
Dim.
A
B
C
D
E
Min.
15
19.5
33.5
5
3.5
2.5
1.75
3
Max.
16
20.5
35.5
6
4.5
3.5
2.5
4
F
G
H
I
9
11
J
K
L
M
N
O
P
4.9
1
3.75
4.75
1.8
0.45
5.1
1.3
4.25
5.25
2.2
0.6
Typ 5.08
Q
1.2
1.3
All Dimensions in millimeter
GuangDong YFW Electronics Co, Ltd.
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