YFW-YFW3N10B
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YFW3N10B
100V N-CHANNEL
ENHANCEMENT MODE
MOSFET
MAIN CHARACTERISTICS
I
D
V
DSS
2.8A
100V
R
DSON
-typ(@V
GS
=10V)
＜
320mΩ
(Type:270 mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
SOT-23
Product Specification Classification
Part Number
Package
SOT-23
Marking
Pack
YFW3N10B
MA4
3000PCS/Tape
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Symbols
Value
Units
Drain-Source Voltage
Gate – Source Voltage
100
V
DS
V
GS
I
D
V
V
±
20
Continuous Drain Current, V
GS
@ 10V
1
@T
A
=25
℃
Continuous Drain Current, V
GS
@ 10V
1
@T
A
=70
℃
Pulsed Drain Current
2
A
2.8
1
I
D
A
5
I
DM
P
D
A
Total Power Dissipation
3
@T
A
=25
℃
Storage Temperature Range
1
W
-55 to +150
-55 to +150
125
T
STG
T
J
°C
°C
°C/W
°C/W
Operating Junction Temperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θJA
R
θJC
80
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
1 / 5
YFW3N10B
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
Test Condition
V
GS
=0V, I
D
=250uA
Symbols
BV
DSS
Min
Typ
–
Max
Units
V
100
–
–
Reference to 25
℃
, I
D
=1mA
V
GS
=10V, I
D
=1A
△
BV
DSS/
–
–
0.067
260
270
1.5
-4.2
–
V/°C
△
TJ
310
320
2.5
–
Static Drain-Source On-Resistance
2
R
DS(ON)
mΩ
V
GS
=4.5V, I
D
=0.5A
–
Gate -Threshold
Voltage
V
DS
=V
GS
, I
D
=250uA
1.0
–
V
GS(th)
V
V
GS
(th) Temperature Coefficient
△
V
GS(th)
mV/°C
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
V
GS
=±20V, V
DS
=0V
–
1
Drain -Source Leakage Current
I
DSS
μA
–
–
5
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
–
–
I
GSS
g
FS
R
g
±
100
–
nA
S
V
DS
=5V, I
D
=1A
–
2.4
2.8
9.7
1.6
1.7
1.6
19
V
DS
=0V , V
GS
=0V , f=1MHz
–
5.6
13.6
2.2
2.4
3.2
34
27
38
711
41
23
1.2
5
Total Gate Charge(10V)
Gate-Source Charge
Gate-Drain Charge
–
Q
g
V
DS
=80V
V
GS
=10V
I
D
=1A
–
Q
gs
Q
gd
t
d(on)
T
r
nC
ns
P
F
–
Turn-on delay time
–
V
DD
=50V
V
GS
=10V
R
G
=3.3
I
D
=1A
Rise Time
–
Turn-Off Delay
Time
Fall Time
–
13.6
19
t
d(OFF)
t
f
–
Input Capacitance
–
508
29
C
iss
C
oss
C
rss
I
S
V
DS
=15V
V
GS
=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
–
–
16.4
–
–
A
A
V
G
=V
D
=0V , Force Current
–
–
I
SM
–
–
1.2
–
V
GS
=0V , I
S
=1A , T
J
=25
℃
V
SD
t
rr
V
–
14
ns
nC
I
F
=1A , dI/dt=100A/µs ,
T
J
=25
℃
Reverse Recovery Charge
Note :
–
9.3
–
Q
rr
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4 .The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
2 / 5
YFW3N10B
Ratings and Characteristic Curves
Typical Characteristics
265
260
255
250
245
5.0
I
D
=1A
4.0
3.0
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
2.0
1.0
0.0
V
GS
=3V
2
4
6
8
10
0
0.5
1
1.5
2
2.5
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
2
1.6
1.2
0.8
0.4
0
T
J
=150
℃
T
J
=25
℃
0
0.3
0.6
0.9
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.4
1.8
2.0
1.6
1.2
0.8
0.4
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
3 / 5
YFW3N10B
Ratings and Characteristic Curves
1000
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
10ms
100
100ms
0.10
1s
Coss
Crss
0.01
DC
T
A
=25
℃
Single Pulse
10
0.00
1
5
9
13
17
21
25
0.1
1
10
V
DS
(V)
100
1000
V
DS
Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
A
+
P
D
M
x R
θJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
4 / 5
YFW3N10B
Package Outline Dimensions Millimeters
SOT-23
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
5 / 5
