YFW-YFW4N65AMJ
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YFW4N65AMJ/AD
650V N-CHANNEL
ENHANCEMENT MODE
MOSFET
MAIN CHARACTERISTICS
I
D
V
DSS
4A
650V
R
DSON
-typ(@V
GS
=10V)
＜
2.4Ω
(Type:2Ω)
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
TO-252
TO-251
Product Specification Classification
Part Number
YFW4N65AD
YFW4N65AMJ
Package
Marking
Pack
TO-252
TO-251
YFW 4N65AD XXXXX
YFW 4N65AMJ XXXXX
2500PCS/Tape
4000PCS/Tape
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Drain-Source Voltage (V
GS
= 0V)
Symbols
Value
Units
650
4
V
DS
I
D
V
A
Continuous Drain Current
Pulsed Drain Current (Note1)
16
I
DM
A
Gate – Source Voltage
±
30
160
4
V
GS
E
AS
V
Single Pulse Avalanche Energy (Note2)
Avalanche Current (Note1)
mJ
A
I
AR
Repetitive Avalanche Energy (Note1)
Power Dissipation(TC=25
℃
)
20
E
AR
P
D
mJ
W
36
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction ambient
-55 to +150
3.47
T
J
,T
STG
R
θJC
R
θJA
°C
°C/W
°C/W
62.5
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
1 / 6
YFW4N65AMJ/AD
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Test Condition
V
GS
=0V, I
D
=250uA
V
DS
=650V , V
GS
=0V , T
J
= 25
℃
V
GS
=±30V
Symbols
V(BR)DSS
I
DSS
Min
Typ
–
Max
Units
V
650
–
–
–
–
1
μA
nA
V
–
I
GSS
±
100
Gate-Source Threshold Voltage
Drain-Source On-Resistance (Note3)
Input Capacitance
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=2.0A
3.0
–
–
4
V
GS(th)
R
DS(ON)
C
iss
2
2.4
Ω
–
580
69.5
10.9
15
2.5
7.5
12
22
50
48
–
–
–
V
DS
=25V
V
GS
=0V
f=1MHz
Output Capacitance
–
C
oss
C
rss
P
F
Reverse Transfer Capacitance
Total Gate Charge
–
–
–
–
Q
g
V
DD
=520V
I
D
=4A
V
GS
=10V
Gate-Source Charge
–
–
Q
gs
nC
Gate-Drain Charge
–
–
Q
gd
Turn-on delay time
–
–
t
d(on)
T
r
t
d(OFF)
t
f
V
DD
=400V
I
D
=4A
R
G
=25Ω
Turn-on Rise Time
–
–
ns
A
Turn-Off Delay
Time
–
–
Turn-on Fall Time
–
–
Continuous Body Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
–
4
16
1.4
–
I
S
T
C
=25
℃
–
–
I
SM
–
–
T
J
= 25ºC, I
SD
= 4A, V
GS
= 0V
V
SD
V
Reverse Recovery Time
–
250
3.5
t
rr
nS
uC
V
GS
= 0V,I
S
= 4A
diF/dt =100A /μs
Reverse Recovery Charge
Notes
–
–
Q
rr
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 4A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25 ºC
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
2 / 6
YFW4N65AMJ/AD
Ratings and Characteristic Curves
Figure 1. Output Characteristics (T
J
= 25ºC)
Figure 2. Body Diode Forward Voltage
1.2
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
3 / 6
YFW4N65AMJ/AD
Ratings and Characteristic Curves
Figure 7. Capacitance
Figure 8. Gate Charge
10
4
10
8
V
DD
= 120V
V
DD
= 400V
10
3
10
2
10
1
10
0
C
iss
C
oss
C
rss
6
V
DD
= 480V
4
2
V
GS
= 0V
f = 1MHz
0
0
3
6
9
12
15
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
Q
g
,
T
o
tal Gate Charge (nC)
Figure 9. Transient Thermal Impedance
TO-220F
Figure 10. Transient Thermal Impedance
TO-220
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
4 / 6
YFW4N65AMJ/AD
Ratings and Characteristic Curves
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
5 / 6
YFW4N65AMJ/AD
Package Outline Dimensions Millimeters
TO-251
Dim.
A
A2
A3
b
c
D
D2
E
Min.
Max.
2.4
2.2
0.95
0.45
0.65
0.45
6.45
5.2
1.15
0.65
0.85
0.55
6.75
5.4
5.8
6
E2
e
e1
L
0.95
1.25
Typ 2.3
Typ 4.6
4
1.2
4.2
1.5
L1
All Dimensions in millimeter
TO-252
Dim.
A
A2
B
B2
C
C2
D
Min.
2.10
0
0.66
5.18
0.40
0.44
5.90
Typ.
–
–
–
–
–
–
–
Max.
2.50
0.10
0.86
5.48
0.60
0.58
6.30
D1
E
E1
G
H
L
5.30REF
6.40
4.63
4.47
9.50
1.09
1.35
–
–
–
–
–
–
6.80
–
4.67
10.70
1.21
1.65
–
L2
V1
–
7
°
V2
0
°
–
6
°
All Dimensions in millimeter
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
6 / 6
