YFW-YFW60N03AD
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YFW60N03AD
30V N-CHANNEL
ENHANCEMENT MODE
MOSFET
MAIN CHARACTERISTICS
I
D
V
DSS
60A
30V
R
DSON
-typ(@V
GS
=10V)
＜
8.5mΩ
(Type:6.0 mΩ)
Application
VBUS
Wireless impact
Mobile phone fast charging
TO-252
Product Specification Classification
Part Number
Package
TO-252
Marking
Pack
YFW60N03AD
YFW 60N03AD XXXXX
2500PCS/Tape
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Symbols
Value
Units
Drain-Source Voltage
Gate – Source Voltage
30
±
20
60
V
DS
V
GS
I
D
V
V
Continuous Drain Current, V
GS
@ 10V
1
@T
C
=25
℃
Continuous Drain Current, V
GS
@ 10V
1
@T
C
=100
℃
Pulsed Drain Current
2
A
40
I
D
A
92
I
DM
E
AS
I
AS
A
Single Pulse Avalanche Energy
3
57.8
mJ
A
Avalanche Current
34
Total Power Dissipation
4
@T
C
=25
℃
Storage Temperature Range
P
D
29
W
-55 to +150
-55 to +150
62.5
T
STG
T
J
°C
°C
°C/W
°C/W
Operating Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
1
Thermal Resistance Junction-Case
1
R
θJA
R
θJC
4.32
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
1 / 5
YFW60N03AD
Maximum Ratings at Tc=25°C unless otherwise specified
Characteristics
Test Condition
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10A
Symbols
BV
DSS
Min
Typ
33
Max
Units
V
Drain-Source Breakdown Voltage
30
–
–
–
6.0
8.5
1.6
-5.8
–
8.5
Static Drain-Source On-Resistance
2
R
DS(ON)
mΩ
13
Gate -Threshold
Voltage
1.0
–
2.5
V
GS(th)
V
V
DS
=V
GS
, I
D
=250uA
V
GS(th)
Temperature Coefficient
–
△
V
GS(th)
mV/°C
V
DS
=24V , V
GS
=0V , T
J
=25
℃
–
1
Drain -Source Leakage Current
I
DSS
μA
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=±20V, V
DS
=0V
–
–
5
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
–
–
I
GSS
g
FS
R
g
±
100
nA
S
V
DS
=5V, I
D
=15A
–
9.8
1.7
12.8
3.3
6.5
4.5
10.8
25.5
9.6
1317
163
131
–
–
–
V
DS
=0V , V
GS
=0V , f=1MHz
–
Ω
Total Gate Charge(4.5V)
Gate-Source Charge
Gate-Drain Charge
–
–
Q
g
V
DS
=20V
V
GS
=4.5V
I
D
=12A
–
–
Q
gs
Q
gd
t
d(on)
T
r
nC
ns
P
F
–
–
Turn-on delay time
–
–
V
DD
=12V
V
GS
=10V
R
G
=3.3Ω
I
D
=5A
Rise Time
–
–
Turn-Off Delay
Time
Fall Time
–
–
t
d(OFF)
t
f
–
–
Input Capacitance
–
–
C
iss
C
oss
C
rss
I
S
V
DS
=15V
V
GS
=0V
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
–
–
f=1.0MHz
–
–
–
46
92
1
A
A
V
V
G
=V
D
=0V , Force Current
–
–
I
SM
Diode Forward Voltage
2
–
–
V
GS
=0V , I
S
=1A , T
J
=25
℃
V
SD
Note :
1
、
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2
、
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3
、
The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A
4
、
The power dissipation is limited by 150
℃
junction temperature
5
、
The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
2 / 5
YFW60N03AD
Ratings and Characteristic Curves
Typical Characteristics
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
3 / 5
YFW60N03AD
Ratings and Characteristic Curves
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
4 / 5
YFW60N03AD
Package Outline Dimensions Millimeters
TO-252
Dim.
A
A2
B
B2
C
C2
D
Min.
2.10
0
0.66
5.18
0.40
0.44
5.90
Typ.
–
–
–
–
–
–
–
Max.
2.50
0.10
0.86
5.48
0.60
0.58
6.30
D1
E
E1
G
H
L
5.30REF
6.40
4.63
4.47
9.50
1.09
1.35
–
–
–
–
–
–
6.80
–
4.67
10.70
1.21
1.65
–
L2
V1
–
7
°
V2
0
°
–
6
°
All Dimensions in millimeter
GuangDong YFW Electronics Co, Ltd.
Rev:2021Y1
5 / 5
