YONGYUTAI-13001
| Part # | YONGYUTAI-13001 |
Download  | YONGYUTAI-13001 |
13001
TRANSI STOR (NPN)
MARKING:
Equivalent Circuit:
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
FEATURES:
●
Power switching applications
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
700
Unit
V
Collector-Base Voltage
450
V
Collector-Emitter Voltage
Emitter-Base Voltage
8
V
200
mA
mW
℃
/W
℃
Collector Current
PC
625
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
RΘJA
Tj
416
150
Tstg
-55
～
+150
Storage Temperature
℃
PAGE 1
13001
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specifie
Parameter
Symbol Test
Condition
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC= 1mA, IE=0
IC= 1mA, IB=0
700
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
450
8
V
IE= 0.1mA, IC=0
VCB= 600 V , IE=0
VCB= 400V , IE=0
VEB= 7V , IC=0
V
μA
μA
μA
Collector cut-off current
Collector cut-off current
Emitter cut-off current
ICBO
ICEO
IEBO
hFE
100
100
100
VCE=20V, IC= 20mA
VCE=10V, IC= 0.25mA
VCE=5V, IC= 500mA
14
5
30
DC current gain
hFE
hFE
1
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
IC=50 mA, IB= 10mA
VBE(sat)
IC=50 mA, IB= 10mA
0.4
1.1
V
V
VCE=20V, IC= 20mA
Transition frequency
Collector Current Capacitance
Rail time
fT
8
MHz
f=100MHz
VCB= 10V, IE=0, f=1MHz
IC= 0.1 A
Cod
tr
ts
6
pF
μs
0.9
2.9
Storage time
IC= 0.1 A
1.7
μs
CLASSIFICATION OF hFE
Range
14-17
17-20
20-23
23-26
26-30
PAGE 2
