YONGYUTAI-2SD596
| Part # | YONGYUTAI-2SD596 |
Download  | YONGYUTAI-2SD596 |
2SD596
TRANSI STOR (NPN)
2SD596
Equivalent Circuit:
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
FEATURES:
※
Complimentary to 2SB624
※
High DC Current gain
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
V
VCBO
VCEO
VEBO
IC
30
25
Collector-Base Voltage
V
Collector-Emitter Voltage
Emitter-Base Voltage
5
V
700
mA
mW
Collector Current
PC
200
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
RΘJA
Tj
625
/W
℃
150
℃
℃
Tstg
-55
～
+150
Storage Temperature
PAGE 1
2SD596
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol Test
Condition
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC= 100μA, IE=0
IC= 1mA, IB=0
30
25
5
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=100μA, IC=0
V
VCB=30 V , IE=0
VEB= 5V , IC=0
0.1
0.1
400
μA
μA
IEBO
Emitter cut-off current
hFE
VCE=1V, IC= 100mA
VCE=1V, IC= 700mA
100
50
DC current gain
hFE
VCE(sat) IC=700
mA, IB= 70mA
0.6
0.7
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
VCE=6V, IC= 10mA
VCE=2V, IC= 10mA
f=100MHz
170
MHz
pf
VCE=10V, IE= 0
f=1MHz
Cob
12
Collector Output Capacitance
※
Pulse test: Pulse width≤350μs,Duty Cycle≤2
％
CLASSIFICATION OF hFE
DV1
DV2
DV3
170-270
DV4
200-320
DV5
MARKING
Range
110-180
135-220
250-400
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