YONGYUTAI-8205A
| Part # | YONGYUTAI-8205A |
Download  | YONGYUTAI-8205A |
8205A
8205A
Dual N-Channel MOSFET
V
(BR)DSS
R
DS(on)
MAX
I
D
Max
SOT-23-6
0.022 Ω
@ 4.5V
0.030 Ω
@ 2.5V
2
0
V
5.0A
Equivalent Circuit
FEATURE
z
TrenchFET Power MOSFET
z
Excellent R
DS(on)
z
Low Gate Charge
z
High Power and Current Handing Capability
z
Surface Mount Package
MARKING
APPLICATION
z
Battery Protection
z
Load Switch
8205
—
A
z
Power Management
z
Y :year code
W :week code
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
V
GS
I
D
20
±12
V
V
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
5
A
I
DM
R
θ
JA
T
J
15
A
Thermal Resistance from Junction to Ambient
(note 2)
Junction Temperature
100
℃
/W
℃
150
Storage Temperature
T
STG
T
L
-55~+150
260
℃
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
PAGE 1
8205A
T =25
℃
unless otherwise specified
a
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
=250µA
V
DS
=18V,V
GS
= 0V
V
GS
=±12V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
V
DS
=5V, I
D
=5A
20
V
nA
nA
V
500
±100
1.0
I
GSS
Gate threshold voltage
(note 3)
V
GS(th)
0.
5
0.7
19
24
10
m
Ω
m
Ω
S
22
Drain-source on-resistance
(note 3)
R
DS(on)
30
Forward tranconductance
(note 3)
Diode forward voltage
(note 3)
g
FS
1.2
V
SD
I
S
=1.25A, V
GS
= 0V
V
DYNAMIC CHARACTERICTISCS
(note4)
Input Capacitance
C
iss
800
155
125
pF
pF
pF
Output Capacitance
C
oss
C
rss
V
DS
=
10
V,V
GS
=0V,f =1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERICTISCS
(note 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
t
d(on)
t
r
t
d(off)
t
f
18
4.8
43.5
20
ns
ns
V
DD
=10V,V
GS
=4V,
I
D
=1A,R
GEN
=10
ꢀ
ns
ns
nC
nC
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
11
V
DS
=10V,V
GS
=4.5V,I
D
=4A
2.2
2.5
Notes :
1.Repetitive rating
：
Pluse width limited by maximum junction temperature
2.Surface Mounted on FR4 board
，
t
≤
10 sec.
3. Pulse test : Pulse width
≤
300
μ
s, duty cycle
≤
2%.
4. Guaranteed by design, not subject to production.
PAGE 2
8205A
Typical Electrical and Thermal Characteristics
Vdd
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
Rl
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
G
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
PAGE 3
8205A
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
5
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
5
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
PAGE 4
8205A
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
PAGE 5
