YONGYUTAI-B772

B772  

TRANSISTOR

（

PNP

）  

SOT-89  

FEATURE  

Low speed switching  

1.

BASE  

MARKING:B772  

2

.

COLLETOR  

3

.

EMITTER  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Collector-Base Voltage  

Value  

-40  

-30  

–

6

 

Unit  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

V

Collector Current -Continuous  

Collector Power Dissipation  

Thermal Resistance,

J

unction to Ambient  

-3  

A

P

C  

0.5  

25

0  

W

℃

R

Ө

JA  

/W  

Operation Junction

 

and  

Storage Temperature Range  

T

J

,

T

stg  

-55

~

150  

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test conditions  

I

C

=-100

μ

A ,I

E

=0  

I

C

= -10mA , I

B

=0  

I

E

= -100

μ

A,I

C

=0  

V

CB

= -40

V

,

I

E

=0  

V

CE

=-30

V

,

I

B

=0  

V

EB

=-6

V

,

I

C

=0  

M

in  

-40  

-30  

–

6  

T

yp  

M

ax  

U

nit  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

V

-1  

-10  

-1  

μ

A  

μ

A  

μ

A  

Collector cut-off current  

I

CEO  

Emitter cut-off current  

I

EBO  

DC current gain  

h

FE  

V

CE

= -2

V

,

I

C

= -1A  

I

C

=-2A, I

B

= -0.2A  

60  

400  

-0.5  

Collector-emitter saturation voltage  

V

CE(sat)  

V

V

Base-emitter saturation voltage  

V

BE(sat)  

I

C

=-2A, I

B

= -0.2A  

-1.5  

V

Transition frequency  

f

T  

MHz  

5

0  

f =10MHz  

CLASSIFIC

A

T

ION OF h

FE  

Rank  

R

O

Y

GR  

Range  

60-120  

100-200  

160-320  

200-400  

PAGE 1  

Typical Characteristics  

Static Characteristic  

h

FE

—— I

C  

-1.8  

-1.6  

-1.4  

-1.2  

-1.0  

-0.8  

-0.6  

-0.4  

-0.2  

-0.0  

10000  

1000  

100  

-7.5mA  

-6.75mA  

-6.0mA  

COMMON EMITTER  

T

a

=25

℃

 

COMMON EMITTER  

V

CE

= -2V  

-5.25mA  

-4.5mA  

T

a

=100

℃  

-3.75mA  

-3.0mA  

T

a

=25

℃  

-2.25mA  

-1.5mA  

I

B

=-0.75mA  

10  

-3000  

-0.0  

-0.5  

-1.0  

-1.5  

-2.0  

-2.5  

-3.0  

-3.5  

-1  

-10  

-100  

-1000  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

V

BEsat

—— I

C  

V

CEsat

—— I

C  

-1000  

-100  

-10  

-1500  

-1200  

β

=10  

β

=10  

-900  

-600  

T

a

=100

℃  

T

a

=25

℃  

T

a

=25

℃  

T

a

=100

℃  

-1  

-300  

-3000  

-3000  

-1  

-10  

-100  

-1000  

-1  

-10  

-100  

-1000  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR CURREMT

 

I

C

(mA)  

I

C

—— V

BE  

f

T

—— I

C  

200  

100  

-3000  

-1000  

COMMON EMITTER  

V

CE

= -2V  

-100  

-10  

-1  

COMMON EMITTER  

V

CE

=-5V  

T

a

=25

℃  

-0.1  

10  

-300  

-400  

-500  

-600  

-700  

-800 -900

 

-100

0

–

110

0

–

1200  

-4.23  

-10  

-100  

BASE-EMMITER VOLTAGE

 

V

BE

(mV)  

COLLECTOR CURRENT

 

I

C

(mA)  

P

C

—— T

a  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

0

25  

50  

75  

100  

125  

150  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

PAGE 2