YONGYUTAI-BC857C
| Part # | YONGYUTAI-BC857C |
Download  | YONGYUTAI-BC857C |
BC856/BC857/BC858
TRANSI STOR (PNP)
MARKING:
Equivalent Circuit:
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
FEATURES:
※
Ideaiiy suited for automatic insertion
※
For switching and AF amplifier applications
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
-80
-50
-30
BC856
BC857
BC858
VCBO
V
Collector-Emitter Voltage
-65
-45
-30
BC856
BC857
BC858
VCEO
V
Emitter-Base Voltage
Collector Current
VEBO
IC
-5
V
A
-0.1
200
625
150
PC
mW
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
RΘJA
Tj
/W
℃
℃
Storage Temperature
Tstg
-65
～
+150
℃
DEVICE MARKING:
BC857A=3E; BC857B=3F; BC857C=3G
BC858A=3J; BC858B=3K; BC858C=3L
BC856A=3A; BC856B=3B
PAGE 1
BC856/BC857/BC858
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol Test
Condition
Min
Typ
Max
Unit
Collector-base breakdown voltage
-80
-50
-30
BC856
BC857
BC858
V(BR)CBO
V(BR)CEO
IC= -10μA, IE=0
V
Collector-emitter breakdown voltage
-65
-45
-30
BC856
BC857
BC858
IC= -10mA, IB=0
IE=-1μA, IC=0
V
V(BR)EBO
ICBO
Emitter-base breakdown voltage
-5
V
Collector cut-off current
VCB=-70 V , IE=0
VCB=-50 V , IE=0
VCB=-30 V , IE=0
BC856
BC857
BC858
-0.1
-0.1
μA
μA
IEBO
VEB=-5V , IC=0
Emitter cut-off current
DC current gain
125
220
420
250
475
800
;
BC856A;
857A
858A
BC856B; 857B; 858B
BC857C; BC858C
hFE
VCE=-5V, IC= -2mA
VCE(sat) IC=-100
mA, IB= -5mA
VBE(sat) IC=-100
mA, IB= -5mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
-0.5
-1.1
V
V
VCE=-5V, IC= -10mA
fT
100
MHz
pF
f=100MHz
VCE=-10V,
f=1MHz
Cob
Collector Current
Capacitance
4.5
CLASSIFICATION OF hFE
Rank
L
H
J
Range
125-200
200-350
300-400
PAGE 2
