YONGYUTAI-KTC3875
| Part # | YONGYUTAI-KTC3875 |
Download  | YONGYUTAI-KTC3875 |
KTC3875
TRANSI STOR (NPN)
MARKING:
Equivalent Circuit:
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
FEATURES:
※
Complimentary to KTA1504
※
High HFE
※
LOW noise
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
60
50
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
5
V
150
150
833
150
mA
mW
Collector Current
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
RΘJA
Tj
/W
℃
℃
℃
～
-55 +150
Tstg
Storage Temperature
PAGE 1
KTC3875
ELECTRICAL CHARACTERISTICS (Ta=25
unless otherwise specified)
℃
Parameter
Symbol Test
Condition
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC= 100μA, IE=0
IC= 1mA, IB=0
60
50
5
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=100μA, IC=0
VCB=60 V , IE=0
VEB= 5V , IC=0
VCE=6V, IC= 2mA
V
0.1
0.1
700
0.25
1
μA
μA
IEBO
Emitter cut-off current
hFE
70
80
DC current gain
VCE(sat) IC=100
mA, IB= 10mA
VBE(sat) IC=100
mA, IB= 10mA
0.1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE=10V, IC= 1mA
fT
MHz
pf
f=1MHz
VCE=10V, IE= 0
Cob
2.0
1.0
3.5
10
Collector Output Capacitance
Noise Figure
f=1MHz
VCE=6V, IC= 0.1mA
Rg=10kΩ; f=1KHz
NF
dB
CLASSIFICATION OF hFE
O
Y
GR
BL
Rank
Range
Marking
70-140
ALO
120-240
ALY
200-400
ALG
350-700
ALL
PAGE 2
