YONGYUTAI-MMBT4401
| Part # | YONGYUTAI-MMBT4401 |
Download  | YONGYUTAI-MMBT4401 |
MMBT4401
TRANSI STOR (NPN)
MARKING:
Equivalent Circuit:
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
FEATURES:
※
Complimentary to MMBT4403
※
Collector Current: Ic=0.6A
※
Switching Transistor
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
60
Unit
V
40
V
Collector-Emitter Voltage
Emitter-Base Voltage
6
V
600
mA
mW
Collector Current
PC
300
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
RΘJA
Tj
417
/W
℃
150
℃
Tstg
-55
～
+150
℃
Storage Temperature
PAGE 1
MMBT4401
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol Test
Condition
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC= 100μA, IE=0
IC= 1mA, IB=0
60
40
6
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE= 100μA, IC=0
VCB= 60 V , IE=0
VCB= 40V , IE=0
VEB= 6V , IC=0
V
0.1
0.1
0.1
300
μA
μA
μA
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
VCE=1V, IC= 150mA
VCE=5V, IC= 10mA
VCE=5V, IC= 100mA
100
80
hFE
DC current gain
hFE
60
VCE(sat) IC=150
mA, IB= 15mA
VBE(sat) IC=150
mA, IB= 15mA
0.4
1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE=20V, IC= 100mA
fT
250
MHz
Transition frequency
Delay time
f=100MHz
VCC=3V, VBE=0.5V,
IC=10mA, IB=1mA,
td
15
20
ns
ns
ns
ns
VCC=3V, VBE=0.5V,
IC=10mA, IB=1mA,
tr
Rise time
VCC=3V, VBE=0.5V,
IC=10mA, IB=1mA,
ts
225
60
Storage time
Fall time
VCC=3V, VBE=0.5V,
IC=10mA, IB=1mA,
tf
CLASSIFICATION OF HFE
HFE
Rank
Range
100-300
L
H
100-200
200-300
PAGE 2
