YONGYUTAI-MMBTA56
| Part # | YONGYUTAI-MMBTA56 |
Download  | YONGYUTAI-MMBTA56 |
MMBTA56
TRANSI STOR (PNP)
Equivalent Circuit:
MARKING:
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
FEATURES:
※
Complimentary Type NPN Transistor MMBTA06
※
General Purpose Amplifier Applications
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Parameter
Symbol
Value
-80
Unit
V
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
-80
V
-4
V
Collector Current
-500
225
mA
mW
℃
/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
PC
RΘJA
Tj
555
150
Storage Temperature
Tstg
-55
～
+150
℃
PAGE 1
MMBTA56
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -100μA, IE=0
IC= -1mA, IB=0
-80
-80
-4
V
V
IE=-100μA, IC=0
V
VCB=-80 V , IE=0
VCB=-60V , IE=0
-0.1
-1
μA
μA
μA
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
VEB= -3V , IC=0
-0.1
400
hFE
VCE=-1V, IC= -10mA
VCE=-1V, IC= -100mA
IC=-100 mA, IB= -10mA
VCE=-1V, IC=-100mA
100
100
DC current gain
hFE
VCE(sat)
VBE(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
-0.25
-1.2
V
V
VCE=-1V, IC= -100mA
f=100MHz
fT
Transition frequency
50
MHz
CLASSIFICATION OF hFE
Rank
L
H
G
Range
100-200
200-300
300-400
PAGE 2
