YONGYUTAI-SI2302-A2
| Part # | YONGYUTAI-SI2302-A2 |
Download  | YONGYUTAI-SI2302-A2 |
SI2302
SOT-23
場效應晶體管
(SOT-23 Field Effect Transistors)
N-Channel Enhancement-Mode MOS FETs
N
溝道增強型
MOS
場效應管
■
MAXIMUM RATINGS
最大額定值
Characteristic
特性參數
Symbol
符號
Rat
額定值
Unit
單位
Drain-Source
V
o
ltage
漏極-源極電壓
BV
DSS
V
GS
I
D
20
+10
3.5
11
V
V
A
A
Gate- Source
V
o
ltage
栅極-源極電壓
Drain Current (continuous)
漏極電流-連續
Drain Current (pulsed)
漏極電流-脉冲
I
DM
Total Device Dissipation
總耗散功率
P
D
1000
mW
T
=
25
℃環境溫度爲
25
℃
A
Junction
結溫
T
J
150
℃
℃
Storage Temperature
儲存溫度
T
stg
-55to+150
■
DEVICE MARKING
打標
SI2302=A2
PAGE 1
SI2302
■
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25
℃
unless otherwise noted
如無特殊說明，溫度爲
25
℃
)
Characteristic
特性參數
Symbol
符號
Min
Typ
最小值
典型值
最大值
Max
Unit
單位
Drain-Source Breakdown
V
o
ltage
漏極-源極擊穿電壓
(I
D
= 250uA,V
=0V)
—
—
—
—
1.5
1.5
BV
20
0.5
—
V
V
V
DSS
GS
Gate Threshold
V
o
ltage
V
GS(th)
栅極開启電壓
(I
D
= 250uA,V
= V
)
GS
DS
Diode Forward
V
o
ltage Drop
内附二極管正向壓降
(I
S
= 0.75A,V
=0V)
V
SD
DSS
GSS
GS
Zero Gate
V
o
ltage Drain Current
零栅壓漏極電流
(V =0
V
,
V =
1
6V)
I
I
—
—
—
—
—
—
1
10
u
A
n
A
GS
DS
(V =0
V
,
V
= 16
V
, T
=
55
℃
)
GS
DS
A
Gate Body Leakage
栅極漏電流
(V =+10
V
,
V
=
0V)
+100
GS
DS
Static Drain-Source On-State Resistance
静态漏源導通電阻
(I
D
=2.8A,V =4.5V)
R
DS(ON)
60
80
mΩ
GS
(I
D
=2A,V =2.5V)
GS
Input Capacitance
輸入電容
C
—
—
—
—
—
—
800
200
20
pF
pF
ns
ISS
(V =0
V
,
V =
1
0
V
,
f=1MHz)
GS
DS
Common Source Output Capacitance
共源輸出電容
(V
GS
=0
V
,
V
DS
= 10
V
,
f=1MHz)
C
OSS
Turn-ON Time
开启時間
t
(on)
(V =
10
V
, I
=
3
.5A, R
GEN
=10
Ω
)
=10
Ω
)
DS
D
Turn-OFF Time
关断時間
(V =
10
V
, I
=
3
.5A, R
GEN
t
—
—
80
ns
(off)
DS
D
Pulse Width<300
μ
s; Duty Cycle<2.0%
PAGE 2
