YONGYUTAI-SI2306
| Part # | YONGYUTAI-SI2306 |
Download  | YONGYUTAI-SI2306 |
SI2306
N-Channel MOSFET
Product Summary
Features
V
DS
R
DS(ON)
MAX
50mΩ@10V
I
D
MAX
4A
•
Trench Power LV MOSFET technology
•
High Power and current handing capability
30V
60mΩ@4.5V
Application
•
PWM application
•
Load switch
D
D
A01T: Device code
A01T
S
G
S
G
Marking and pin assignment
SOT-23 top view
Schematic diagram
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
Drain-Source Breakdown Voltage
30
±20
V
V
V
DS
Gate-Source Voltage
V
GS
Maximum Junction Temperature
150
°C
°C
A
T
J
Storage Temperature Range
-55 to 150
4
T
STG
Diode Continuous Forward Current
T
c
=25°C
I
S
Mounted on Large Heat Sink
Pulse Drain Current Tested
T
c
=25°C
15
4
A
A
I
DM
Continuous Drain Current@GS=10V
T
c
=25°C
T
c
=25°C
I
D
Maximum Power Dissipation
1
W
P
D
Thermal Resistance Junction-Ambient((*1 in2 Pad of 2-oz Copper), Max.)
125
°C/W
R
θJA
PAGE 1
SI2306
Electrical Characteristics (TJ=25
℃
unless otherwise noted)
Symbol
Parameter
Condition
Min Typ Max
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
BV
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
30
—
—
—
—
1.0
±100
2.2
50
V
uA
nA
V
VGS=0V
，
ID=250μA
VDS=30V
，
VGS=0V
VGS=±20V
，
VDS=0V
VDS=VGS
，
ID=250μA
VGS=10V
，
ID=4A
I
GSS
—
—
V
GS(th)
1.0
—
1.5
32
41
mΩ
mΩ
R
DS(on)
Drain-Source On-State Resistance
—
60
VGS=4.5V
，
ID=3A
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
C
ISS
Input Capacitance
—
—
—
275
—
—
—
pF
pF
pF
VDS=15V
，
VGS=0V
，
f=1MHz
C
OSS
C
RSS
Output Capacitance
43
Reverse Transfer Capacitance
33
Switching Characteristics
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
—
—
—
—
—
—
—
6.6
1.4
2
—
—
—
—
—
—
—
nC
nC
nC
nS
nS
nS
nS
VDS=15V
，
ID=4A
，
VGS=10V
3.3
14.8
12
VDD=15V
，
RL=3.6Ω
，
VGS=4.5V
，
RG=6Ω
t
d(off)
t
f
3.1
Source- Drain Diode Characteristics
Forward on voltage
—
—
1.2
V
Tj=25
℃，
Is=4A
，
V
SD
PAGE 2
SI2306
Typical Operating Characteristics
30
10
8
5V
10V
25
20
15
10
5
4V
6
4
V
DS
=10V
VGS=3V
2
0
0
0
2
4
6
8
0
1
2
3
4
5
Qg -Total Gate Charge (nC)
VDS, Drain -Source Voltage (V)
Fig2. Typical Gate Charge Vs.Gate-Source Voltage
Fig1. Typical Output Characteristics
2
100
80
VGS=4.5V
ID=4.5A
1.5
1
60
VGS=2.5V
40
VGS=4.5V
20
0
0.5
0
25
50
75
100
125
150
0
2
4
6
8
10
Tj – Junction Temperature (°C)
Fig3. Normalized On-Resistance Vs. Temperature
ID, Drain-Source Current (A)
Fig4. On-Resistance Vs. Drain-Source Current
600
500
400
300
200
100
0
100
10
Limit by R
DS(ON)
10us
Ciss
100us
1
1ms
10ms
DC
0.1
0.01
Coss
Crss
0
4
8
12
16
20
0.01
0.1
1
10
100
VDS, Drain -Source Voltage (V)
Fig5. Maximum Safe Operating Area
VDS , Drain-Source Voltage (V)
Fig6 Typical Capacitance Vs.Drain-Source Voltage
PAGE 3
SI2306
SOT-23 Package information
Dimensions in
M
illimeters(mm)
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950TYP
0.550REF
0.037TYP
0.022REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
PAGE 4
