ZHHXDZ-AO4435-HX
| Part # | ZHHXDZ-AO4435-HX |
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珠海海芯电子有限公司
AO4435-HX P-Channel 30-V (D-S) MOSFET
PRODUCT
SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
I
D
(A)d
–
9.0
Qg (Typ.)
–
30
0.018 at V
GS
=
–
10 V
0.024 at V
GS
=
–
4.5 V
13 nC
–
7.8
SOP
–
8
FEATURES
®
⚫
TrenchFET P
⚫
100 % R
T
e
sted
g
ONS
Maximum Ratings and Thermal Charact
less otherwise noted)
Parameter
Limit
30
Unit
Drain
–
Source Voltage
Gate
–
Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
V
A
TA = 25°C
TA = 70°C
Operating Junction and Storage
T
e
mperature Range
T
J
,
T
s
tg
RθJA
Maximum Junction
–
to
–
Ambient Thermal Resistance(1)
Notes:
(1) Surface Mounted on FR4 Board, t ≤ 10 sec.
Version 1.0
–
1
–
Date
:
Jan. 2022
珠海海芯电子有限公司
Electrical Characteristics(TJ = 25
。
C unless otherwise noted)
Parameter
Static
Symbol
Test Condition
Min
Typ
Max Unit
Gate Threshold Volta
V
GS(th)
V
DS
= V
GS
, I
D
= – 250µA
– 1.0
–
– 3.0
V
Gate
–
Body Le
I
GSS
I
DSS
V
DS
= 0V, V
GS
= ± 20V
V
DS
= – 30
V
,
V
GS
= 0V
V
DS
≥ –5
V
,
V
GS
= – 10V
V
GS
= 0
V
,
I
D
= – 250µA
V
GS
= – 10
V
,
I
D
= –8.0A
V
GS
= –4.5
V
,
I
D
= –5.0A
DS
= – 15
V
,
I
D
= –8.0A
–
–
–
–
± 100
nA
µ
Zero Ga
On
–
State
Drain
–
Source
– 1.0
–
A
A
V
Ω
ID(on)
SS
–40
– 30
–
–
–
–
Drain
–
Source On
15.3
25.3
22
20
35
–
m
–
Forward Transconducta
–
S
Dynamic
S
= – 15V,
T
o
tal Gate Charge
–
54
60
nC
V
,
I
D
= –4.6A
Gate
–
Source Charge
Gate
–
Drain Charge
Turn
–
On Delay Time
–
–
–
8.5
10.3
24
–
–
5Ω
td(on
30
ns
Rise Time
tr
td(off)
tf
–
12
78
30
120
80
–
Turn
–
Off Delay Time
Fall Time
37
V
G
V
DS
= –
f= 1.0MH
Input Capacitance
Ciss
0
pF
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
bSource
–
Drain Diode
Maximum Diode Forward Current
Diode Forward Voltage
IS
–
VSD
I
S
= –2.1A, V
GS
= 0V
Notes:
(1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
Version 1.0
–
2
–
Date
:
Jan. 2022
珠海海芯电子有限公司
TYPICAL CHARACTERISTICS
2 5
° C,
unless otherwise noted
T
J
, Junction
T
emperature (°C)
Fig 1. On
–
Re
Fig 2. On
–
Resistance vs. Junction Temperature
Q
g
, Gate Charge (nC)
)
Fig
erature
Fig 3. Gate Charge
T
J,
Junction
T
e
mperature (°C)
Fig 6.Power vs. Pulse Duration
Fig 5.Breakdown Voltage vs. Junction Temperature
Version 1.0
–
3
–
Date
:
Jan. 2022
珠海海芯电子有限公司
TYPICAL CHARACTERISTICS
2 5
° C,
unless otherwise noted
V
DS
, Drain-to-Source Voltage (V)
V
Fig 8. Capacitance
Fig 7. On
–
Resis
ge
V
G
S
—
Gate
–
to
–
Sourc
e
V
oltage (V)
ltage (V)
Fig 9.Transfer Characteristics
tics
V
SD
—
Source
–
to
–
Drain Voltage (V)
Fig 11. Source
–
Drain Diode Forward Voltage
Fig 12. Transient Thermal Impedance
Version 1.0
–
4
–
Date
:
Jan. 2022
珠海海芯电子有限公司
TYPICAL CHARACTERISTICS
2 5
° C,
unless otherwise noted
urce Voltage (V)
e Operating Area
SOP
–
8 Package Outl
Dimensions are shown i
hes)
DI
INCHES
5.
4.00
Min
Max
A
A1
B
C
D
E
e
0.1
0.35
0.19
4.80
3.80
53
0.069
0.008
0.020
010
1.27 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.2
0.010
0.020
0°
L
q
S
0.44
0.64
0.018
0.026
–
5
–
Date
:
Jan. 2022
珠海海芯电子有限公司
SOP-8 packing information
SOP-8 tape and reel
Tape orient
–
7
–
Version 1.0
Date
:
Jan. 2022
珠海海芯电子有限公司
Disclaimer
e to improve reliability,
function or design or for other
rea
fications and
data are subject to change without notice.
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, Ltd.
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Version 1.0
–
8
–
Date
:
Jan. 2022
