ZHHXDZ-AO4813-HX
| Part # | ZHHXDZ-AO4813-HX |
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珠海海芯电子有限公司
AO4813-HX Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
e
I
D
(A)
d,
–
9.5
V
DS
(V)
R
DS(on)
(Ω)
Qg (Typ.)
0.021 at V
GS
=
–
10 V
0.028 at V
GS
=
–
4.5 V
–
30
15nC
–
8.0
SOP
–
8
FEATURES
®
⚫
TrenchFET Power
MO
⚫
100 % R
T
e
sted
g
⚫
⚫
ABSOLUTE MAXIMUM RATINGS
(TA = 25°
d)
Symbol
V
DS
Parameter
Unit
V
Drain−Source Voltage
V
GSS
I
D
Gate−Source Voltage
Drain Current − Continuous (Note 1a) − Pulsed
P
D
P
D
Power Dissipation for Dual Operation
Power Dissipation
for Single
Operation
0.
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
−55 to
+150
Version 1.0
–
1
–
Date
：
Jan. 2022
珠海海芯电子有限公司
THERMAL CHARACTERISTICS
Symbol
R
0JA
Parameter
Ratings
78
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
°C/W
°C/W
R
0JC
40
ELE
L CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Test Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
BV
DSS
ABV
DSS
AT
J
Voltage
V
GS
= 0 V,
I
D
= −250
μ
A
I
D
= −250
μ
A,
V
mV/
°
C
−
30
−
−
−
−
−
24
T
e
Referenced to 25°C
V
DS
= −24 V, V
GS
= 0 V
V
GS
= −20 V, V
DS
= 0 V
V
GS
= 20
V
,
V
DS
= 0 V
I
DSS
Zero G
Gate−Bo
Gate−Body L
μ
A
nA
−
−
−
−
−
−
−
10
−
100
100
I
GSSF
IGSSR
nA
RISTICS
V
GS(th)
AV
GS(th)
AT
J
Gate Threshold Volt
= VGS , I
D
= −250
μ
A
0
μ
A,
V
mV/
°
C
−
1
−
1.6
−
3
Gate Threshold Voltage
4.4
−
−
T
e
mperature Coefficient
to 25°C
I
D
= −7 A
= −5.5 A
7 A,
m
R
DS(on)
Static Drain−Source On−Resi
19
28
26
23
35
34
Q
−
−
−
I
D(on)
gFS
On−State drain Current
V
A
S
−
30
−
−
−
Forward Transconductance
19
−
DYNAMIC CHARACTER
Ciss
Coss
Crss
Input Capacitance
V
DS
= −
f = 1.0 MHz
−
−
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
td(on)
tr
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
T
o
tal Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
DD
= − 15 V, I
D
= − 1
V
GS
= − 10 V, R
GEN
= 6 Q
−
−
−
−
15
4.4
4.5
td(off)
tf
Qg
V
DS
= − 15
V
,
I
D
= −7 A
V
GS
= −5 V
C
nC
nC
Qgs
Qgd
−
Version 1.0
–
2
–
Date
：
Jan. 2022
珠海海芯电子有限公司
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Symbol
I
S
Parameter
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage
V
GS
= 0 V,
I
S
= −2.1 A
Test Condition
Min Typ
Max Unit
−
−
−
−2.1
A
V
V
SD
−0.75 − 1.2
Notes:
1.
is the sum of the junction−to−case and case−to−ambient resistance where the case thermal reference is defined
R0JA
as the solder mounting
ce of the drain pins.
is guaranteed by design while
is determined by the
R0CA
R0JC
user’s board design
2.
Pulse
T
est Pulse
uty Cycle < 2.0%
TYPICAL CH
5 °
C, unless
otherwise noted
I
D
, Drain
Current (A)
V
DS
, Drain
–
Source Voltage
(
V
)
Fig 2. On
–
Resistance Variation with
Fig 2. On
–
Region Characteristics.
Drain Current and Gate Voltage.
V
DS
, Drain
–
Source Voltage
(
V
)
V
GS
, Gate
T
o
S
ource Voltage
(
V
)
Fig 3. Maximum Safe Operating Area.
Fig 4. Transfer Characteristics.
Version 1.0
–
3
–
Date
：
Jan. 2022
珠海海芯电子有限公司
TYPICAL CHARACTERISTICS
2 5
° C,
unless otherwise noted
T
J,
Junction
T
e
mperature (°C)
V
GS
, Darin
T
o
S
ource Voltage
(
V
)
Fig 5. On
–
Resistance Variation with Temperature.
Fig 6. Capacitance Characteristics.
V
GS
, Gate
T
o
S
ource Voltage
(
V
)
Fig 7. On
–
Resistance Variation with
Gate
–
to
–
Source Voltage.
Q
Gate Charge (nC)
G,
Fig 8. Gate Charge Characteristics.
V
SD
, Body
Diode Forward Voltage
(
V
)
Single Pulse Time
(
s
ec)
Fig 9. Single Pulse Maximum Power Dissipation.
Fig 10. Body Diode Forward Voltage
Variation
Version 1.0
–
4
–
Date
：
Jan. 2022
珠海海芯电子有限公司
TYPICAL CHARACTERISTICS
2 5
° C,
unless otherwise noted
me (sec)
al Response Curve.
SOP
–
8 Package Ou
Dimensions are shown
hes)
DI
INCHES
0.1
0.35
Min
Max
0.069
0.008
0.020
A
A1
B
0.053
4
C
D
E
e
0.19
4.80
3.80
5
4.00
.010
1.27 BSC
SC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
8
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
Version 1.0
–
5
–
Date
：
Jan. 2022
珠海海芯电子有限公司
SOP-8 packing information
SOP-8 tape and reel
Tap
Version 1.0
–
7
–
Date
：
Jan. 2022
珠海海芯电子有限公司
Disclaimer
e to improve reliability,
function or design or for other
fications and
data are subject to change without notice.
ics Co.
, Ltd.
, branches, agents, employees, and
all
r their
representatives
(
c
ollectively, the “
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huhai
Haixi
responsibility for any errors, inaccuracies or
incompl
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ntee, representation or warranty on the
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o
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w on Zhuhai Haixin relinquished:
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and all liability, inclu
pecial, consequential damages or
incidental ; (
3 )
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, including a particular purpose,
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–
infringement and m
Statement on certain t
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ral product Haixin Zhuhai
demand that the Zhuhai Haixin
r the product is suitable
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product features in t
the specification is
appropriate for use in a particular
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technical specifications can be provide
n the application
and performance over time. All ope
ding
typical
parameters must be made by customer’s
ted for each
customer application.
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herein.
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Version 1.0
–
8
–
Date
：
Jan. 2022
