ZHHXDZ-AO4884-HX
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珠海海芯电子有限公司
AO4884-HX N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
Qg (Typ.)
I
D
(A)
0.016 at V
GS
= 10
V
0.019 at V
GS
= 4.5 V
8
8
40
5.9nC
FEATURES
®
⚫
TrenchFET Power
MOSFET
⚫
⚫
100 % R
T
e
sted
g
UIS
T
e
sted
APPLICATIONS
⚫
CCFL Inverter
ABSOLUTE MAXI
Param
25 °C, unless otherwise noted
Symbol
Limit
Unit
V
Drain
–
Source
40
DS
V
V
GS
Gate
–
Source Volt
± 16
8
8
Continuous Drain Current (T
= 150 °C)
J
b,
8
T
A
6.5
20
Pulsed Drain Current (10 µs Pulse Width)
T
= 25 °
2.7
C
Source
–
Drain Current Diode Current
A
T
= 25 °C
A
Pulsed Source
–
Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
T
T
= 25 °C
C
= 70 °C
C
P
D
Maximum Power Dissipation
T
= 25 °C
= 70 °C
A
T
A
Operating Junction and Storage
T
e
mperature Range
TJ,
T
s
tg
–
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
45
M
62.5
38
Maximum Junction
–
to
–
Ambient
b, d
t
≤
10 s
R
thJA
Maximum Junction
–
to
–
Foot (Drain)
Steady
–
State
R
thJF
29
Notes
a.
Based on TC = 25 °C.
b.
Surface Mounted on 1″ x 1″ FR4 board.
c . t = 10 s.
c.
Maximum under steady state conditions is 120 °C/W.
Version 1.0
–
1
–
Date
：
Jan. 2022
珠海海芯电子有限公司
SPECIFICATIONS
T =
25 °C, unless otherwise noted
J
Min. Typ. Max. Unit
Parameter
Symbol
Test Conditions
Static
V
DS
V
GS
= 0 V,
I
D
= 250 µA
I
D
= 250 µA
40
V
Drain
–
Source Breakdown Voltage
ΔV
DS
/T
J
V
DS
T
e
mperature Coefficient
40
mV/°C
ΔV
GS(th)
V
GS(th)
I
GSS
/
V
GS(th)
T
e
mperature C
cient
I
D
= 250
µA
–
4.8
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
=
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
GS
= 4.5
V
,
I
D
= 4 A
V
DS
= 15 V, I
D
= 5 A
0.8
2.0
100
1
V
Gate Thresho
nA
µA
Gate
–
I
DSS
Zero G
10
On
–
Sta
n)
20
A
0.013 0.016
0.015 0.019
23
Ω
Drain
–
Source On
–
Forward Transcon
S
a
Dynamic
N
–
Channel
2390
270
Input Capacitance
Output Capacitance
pF
GS
= 0 V,
I
D
= 1 MHz
165
Reverse Transfer Capacitance
0 V,
I
D
= 5 A
56
26
5.5
9.7
2.6
15
20
56
85
40
T
o
tal Gate Charge
Q
g
Q
gd
R
g
Gate
–
Source Charge
Gate
–
Drain Charge
Gate Resistance
Turn
–
On Delay Time
Rise Time
D
= 5 A
nC
4.0
23
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
D
I
D
5 A, V
G
30
85
Turn
–
Off Delay Time
Fall Time
15
135
80
Turn
–
On Delay Time
Rise Time
ns
N
–
Chan
V
DD
= 20
V
,
R
L
I
D
5 A, V
GEN
= 4.5 V,
Turn
–
Off Delay Time
Fall Time
Drain
–
Source Body Diode Characteristics
I
S
I
SM
V
SD
t
rr
T
C
= 25 °C
I
S
= 1.5 A
Continuous Source
–
Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
26
36
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
N
–
Channel
I
F
= 2 A, dI/dt = 100 A/µs, T
J
=
25 °C
Q
rr
t
a
t
b
Notes
a.
Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Version 1.0
–
2
–
Date
：
Jan. 2022
珠海海芯电子有限公司
V
D
V
GS,
Gate
–
to
–
Source Voltage (V)
Fig 2. Typical Transfer Characteristics
Fig 1. Typica
(°C)
ature
I
D
–
Drain Current (A)
Fig 3. On
–
Resistance vs. Drain Current
and Gate Voltage
unction Temperature
V
DS,
Drain
–
to
–
Source Voltage (V)
V
SD,
Source
–
to
–
Drain Voltage (V)
Fig6.Capacitance
Fig 5. Typical Source
–
Drain Diode
Forward Voltage
Version 1.0
–
3
–
Date
：
Jan. 2022
珠海海芯电子有限公司
V
DS,
Drain
–
to
–
Source Voltage (V)
Fig 7. Gat
Fig 8.Maximum Safe Operating Area
T
J
–
T
e
mperature (°C)
Fig 9. Threshold Voltage
Voltage (V)
. Gate
–
to
–
Source Voltage
T
C
,Case
T
e
mperature (
°
C)
T
C
,Case
T
e
mperature(°C)
Fig 11. Current Derating*
Fig 12. Power Derating, Junction
–
to
–
Fo
Version 1.0
–
4
–
Date
：
Jan. 2022
珠海海芯电子有限公司
Time (s)
T
A
Fig 13. Single Pulse Power, Junction
–
to
–
Ambient
Fig 12. Power
Square Wave Pulse Duratio
Fig 14. Normalized Thermal Transient Impedan
Square Wave Pulse Duration (s)
Fig 14. Normalized Thermal Transient Impedance, Junction
–
to
–
Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction
–
to
–
case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls
below the package limit.
Version 1.0
–
5
–
Date
：
Jan. 2022
珠海海芯电子有限公司
SOP
–
8
ge Outline
Di
shown in millimeters (inches)
MILLIMETERS
DIM
INCHES
Max
Max
Min
1.35
0.10
.35
Min
1.75
0.20
0.51
0.053
0.004
0.014
0.069
0.008
0.020
0.007
5
0.25
0.010
5.00
00
0.189
0.150
0.196
0.157
e
0.050 BSC
0.244
H
h
0.5
0°
0.228
0.010
20
0.020
L
q
0.037
8°
S
0.44
0.026
Version 1.0
–
6
–
Date
：
Jan. 2022
珠海海芯电子有限公司
SOP-8 packing information
SOP-8 tape and reel
Tape ori
–
8
–
Version 1.0
Date
：
Jan. 2022
珠海海芯电子有限公司
Disclaimer
Al
ts due to improve reliability,
function or design or for other
reaso
specifications and
data are subject to change without notice.
ectronics Co.
, Ltd.
, branches, agents, employees, and
ts or their
representatives
(
c
ollectively, the “
z
huhai
no responsibility for any errors, inaccuracies or
inc
n the table or any other any disclosure of any
infor
roduct.(www.haixindianzi.com)
Zh
arantee, representation or warranty on the
product fo
f any goods or continuous production.
T
o
t
he
maximum e
ble law on Zhuhai Haixin relinquished:
( 1 )
any applicatio
out of or use of any products;
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and all liability,
to special,
consequential damages or
incidental ; (
3 )
anties, including a particular purpose,
non
–
infringement a
ntee.
Statement on cer
are based on knowledge of the
product is often used in
general product Haixin Zhuhai
demand that the Zhuhai H
hether the product is suitable
for a
particular application i
ustomer’ s
responsibility to
verify specific
product feature
ed in the specification is
appropriate for use in a partic
er data sheets and
technical specifications can be pr
ing on the application
and performance over time. All ope
ng typical
parameters must be made by custom
idated for each
customer application.
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modify Zhuhai
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to warranty
herein.
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Version 1.0
–
9
–
Date
：
Jan. 2022
