ZHHXDZ-FDS6681Z-HX

珠海海芯电子有限公司  

FDS6681Z-HX P-Channel 30-V (D-S) MOSFET  

PRODUCT SUMMARY  

V

DS

(V)  

R

DS(on)

(

Ω

)  

Qg (Typ.)  

I

D

(A)

d  

-29  

0.005 at V

GS

= – 10 V  

0.00775

at V

GS

= – 4.5 V  

-30  

61nC  

-23  

SOP

–

8  

FEA

TURES  

®

⚫

Tre

nchFET Power

 

MOSFET  

⚫

100 %

R and

 

UIS

T

ested  

g

APPLICATI

ONS  

⚫

Adaptor Switch  

⚫

Notebook  

ABSOLUTE MAXIMUM

RATINGS

(T

A

= 25 °C, u

nless otherwise noted)  

Parameter  

Symbol  

Limit  

Unit  

Drain

–

Source Voltage  

Gate

–

Source Voltage  

V

DS  

–

30  

V

V

GS  

± 20  

T

C

= 25

°C  

T

C

= 70 °C  

T

A

= 25 °C  

T

A

= 70 °C  

–

29  

–

23.5  

–

19.7

a, b  

–

15.6

a, b  

–

70  

Continuous Drain Current (T

J

=  

150 °C)  

I

D  

A

Pulsed Drain Current  

I

DM  

I

S  

T

C

= 25 °C  

T

A

= 25 °C  

–

6.5  

Continuous Source

–

Drain Diode  

–

2.9

a, b  

Current  

Avalanche Current  

I

AS  

–

30  

L = 0.1 mH  

Single

–

Pulse Avalanche Energy  

E

AS  

45  

mJ  

W

T

C

= 25 °C  

T

C

= 70 °C  

T

A

= 25 °C  

T

A

= 70 °C  

7.8  

5

Maximum Power Dissipation  

P

D  

3.

5

a, b  

2.2

a,

b  

–

55 to 150  

Operating Junction and Storage

T

e

mperature Range

 

T

J

, T

stg  

THERMAL RESISTANCE RATINGS  

Parameter  

°C  

Symbol  

R

thJA  

Typical  

29  

Maxi

mum  

Unit  

Maximum Junction

–

to

–

Ambient

a, c  

t



10 s  

35  

16  

°C/W  

Maximum Junction

–

to

–

Foot  

Steady State  

R

thJF  

13  

Notes  

a. Surface mounted on 1″ x 1″ FR4 board.  

b. t = 10 s.  

c. Maximum under steady state conditions is 80 °C/W.  

d. Based on TC = 25 °C.  

Version 1.0  

–

1

–  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

SPECIFICATIONS

(T

J

= 25 °C, unless otherwise noted)  

Parameter  

Symbol  

Test Conditions  

Min.  

Typ.  

Max.  

Unit  

Static  

Drain

–

Source Breakdown V

oltage  

V

DS

T

e

mperature C

oefficient  

V

GS(th)

T

empera

ture Coefficient  

Gate

–

Source

Threshold Voltage  

Gate

–

Sour

ce Leakage  

V

DS  

/T  

V

GS

= 0

V

,

I

D

=

–

250 µA  

I

D

=

–

250 µA  

–

30  

V



V

DS  

J

–

31  

mV/°C  

V

V

/T  

J



GS(th)  

5.3  

V

GS(th)  

I

GS

S  

V

DS

= V

GS

, I

D

=

–

250 µA  

V

DS

= 0 V, V

GS

= ± 20 V  

–

1  

–

2.5  

± 100  

–

100  

–

75  

V

DS

=

–

30 V, V

GS

= 0 V  

nA  

V

DS

=

–

20 V, V

GS

= 0 V  

Zero Gate Voltage Drain

Current  

I

DSS  

V

DS

=

–

30 V, V

GS

= 0

V

,

T

J

= 75 °C  

V

D

S

=

–

20 V, V

GS

= 0

V

,

T

J

= 75 °C  

V

DS



–

10

V

,

V

GS

=

–

10 V  

V

GS

=

–

10 V, I

D

=

–

15 A  

–

10  

µA  

A

–

3  

On

–

State Drain Current

a  

I

D(on)  

R

DS(on)  

g

fs  

–

30  

0.0039  

0.0062  

24  

0.005  

Drain

–

Source On

–

State Resistance

a  



S

V

GS

=

–

4.5 V, I

D

=

–

10 A  

V

DS

=

–

10

V,

I

D

=

–

15 A  

0.0077  

Forward Transconductance

a  

Dynamic

b  

Input Capacitance  

C

is

s  

C

oss  

C

rss  

6000  

860  

790  

129  

61  

Output Capacitance  

V

DS

=

–

15 V, V

GS

= 0

V

, f

= 1 MHz  

pF  

Reverse Transfer Capacitance  

V

DS

=

–

15 V, V

GS

=

–

10

V

,

I

D

=

–

20  

V

D

S

=

–

15 V, V

GS

=

–

4.5

V

,

I

D

=

–

20 A  

195  

95  

T

o

tal Gate Charge  

Q

g  

nC  

Gate

–

Source Charge  

Gate

–

Drain Charge  

Gate Resistance  

Turn

–

On Delay Time  

Rise Time  

Q

gs  

Q

gd  

R

g  

16.5  

23.5  

3

f = 1 MHz  

0.6  

6



t

d(on)  

t

r  

16  

30  

V

DD

=

–

15 V,  

R

L

= 1.

5

  

V

GEN

=

–

10

V

,  

R

g

= 1

  

16  

30  

Turn

–

Off DelayTime  

Fall Time  

t

d(off)  

t

f  

8

0  

150  

40  

20  

ns  

Turn

–

On Delay Time  

Rise Time  

t

d(on)  

t

r  

75  

150  

260  

12

0  

80  

130  

60  

V

DD

=

–

15

V

,

R

L

= 1.5  

I

D

–

10  

A, V

GEN

=

–

4.5

V

,

R

g

= 1  

Turn

–

Off DelayTime  

Fall Time  

t

d(off)  

t

f  

40  

Drain

–

Source Body Diode Characteristics  

Continous Source

–

Drain Diode Current  

Pulse Diode Forward Current  

Body Diode Voltage  

I

S  

I

SM  

V

SD  

t

rr  

T

C

= 25 °C  

–

29  

–

70  

–

1.2  

130  

150  

A

I

S

=

–

3 A, V

GS

= 0 V  

–

0.71  

6

7  

V

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

Reverse Recovery Fall Time  

Reverse Recovery Rise Time  

Notes  

ns  

nC  

I

F

=

–

5 A,  

dI/dt = 100 A/µs,  

T

J

= 25 °C  

Q

rr  

t

a  

74  

22  

ns  

t

b  

45  

a. Pulse test; pulse width



300 µs, duty cycle



2 %.  

b. Guaranteed by design, not subject to production testing  

Version 1.0  

–

2

–  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

I

D

, Drain Current (A)  

V

DS

, Drain

–

to

–

Source Voltage (V)  

Fig 2. Capacitance  

Fig 1. On

–

R

esistance vs. Drain Current  

Q

g

,

T

o

tal Gate Charge (nC)  

T

J,  

Junction

T

e

mp

erature (°C)  

Fig 3. Gate Charge  

Fig 4. On

–

Resistance vs.

Junction Temperature  

V

DS

, Drain

–

to

–

Source Voltage (V)  

V

GS

, Gate

–

to

–

Source Volta

ge (V)  

Fig 5. Output Characteristics  

Fig 6. Transfer Characteristics  

Version 1.0  

–

3

–  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

T

J

,

T

e

mperature (°C)  

Fig 7. Threshold

Voltage  

Time (s)  

Fig 8. Single Pulse Power, Junction

–

to

–

Ambient  

T

C

, Case

T

e

mperature (

°C)  

V

DS

, Drain

–

to

–

Source Voltage (V)  

Fig 9. Safe Operating Area  

Fi

g 10. Current Derating  

T

C

, Case

T

e

mperature (°C)  

Fig 11. Power, Junction

–

to

–

Foot  

T

C

–

Case

T

emperature (°C)  

Fig 12. Power Derating, Junction

–

to

–

Ambient  

Version 1.0  

–

4

–  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

V

SD

, Source

–

to

–

Drain Voltage (V)  

V

SD

, Source

–

to

–

Drain Voltage

(V)  

Fig 14. On

–

Resistance vs. Gate

–

to

–

Source Voltage  

Fig 1

3. Source

–

Drain Diode Forward

Voltage  

Square Wave P

ulse Duration (s)  

Fig 15. Normalized Thermal Transient I

mpedance, Junction

–

to

–

Ambien

t  

Square Wave Pulse Duration (s)  

Fig 16. Normalized Thermal Transient Impedance, Junction

–

to

–

Foot  

–

5

–  

Version 1.0  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

SOP

–

8 Package Outlin

e  

Dimensi

ons are shown in

millimeters (inches)  

MILLIMETERS  

DIM  

INCHES  

Max  

Max  

1.75  

0.20  

0.51  

Min  

1.35  

0.10  

0.35  

Min  

A

A

1  

B

0.053  

0.004  

0.014  

0.069  

0.008  

0.020  

0.007  

5

C

D

0.19  

0.2

5  

0.010  

4.80  

3.80  

5.00  

4.00  

0.189  

0.150  

0.196  

0.157  

E

e

1.27 BSC  

0.050 BSC  

0.244  

H

h

5.80  

0.25  

0.50  

0°  

6.20  

0.50  

0.93  

8

°  

0.228  

0.010  

0.020  

0°  

0.020  

L

q

0

.037  

8°  

S

0.44  

0.64  

0.018  

0.026  

Version 1.0  

–

6

–  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

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珠海海芯电子有限公司  

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SOP-8 tape and reel  

Tape o

rientation  

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珠海海芯电子有限公司  

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function or design or for other  

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oduc

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data are subject to change without notice.  

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huhai Haixin

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, Ltd.

 

, branches, agents, employees, and  

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i

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inf

ormation  

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huhai Haixin makes no

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Version 1.0  

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9

–  

Date

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Jan. 2022