ZHHXDZ-IRF7341TRPBF-HX
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珠海海芯电子有限公司
IRF7341TRPBF-HX P-Channel 60-V (D-S) MOSFET
FEATURES
TrenchFET Power
MOSFET
PRODUCT SUMMARY
R
DS(on)
(
Ω
)
®
⚫
⚫
V
DS
(V)
I
D
(A)
100 % R
T
e
sted
g
0.040 at V
GS
= – 10 V
0.055 at V
GS
= 4.5 V
60
7
SOP
–
8
Absolute Maximum Rati
otherwise noted
Parameter
ximum
Units
Drain
–
Source Voltage
Gate
–
Source Voltage
60
V
V
±20
T
A
=25°C
T
A
=70°C
Continuous Drain
Current
AF
A
Pulsed Drain Current
B
I
DM
P
D
T
A
=25°C
T
A
=70°C
W
A
Power Dissipation
Avalanche Current
B
I
AR,
I
AS
E
AR,
E
AS
T
J
, T
STG
Repetitive avalanche energy 0.1mH
B
Junction and Storage
T
e
mperature Range
–
55 to
Thermal Characteristics
Parameter
Symbol Typ
M
62.5
110
60
°C/
Maximum Junction
–
to
–
Ambient
A
Maximum Junction
–
to
–
Ambient
A
t
≤ 10s
48
R
JA
Steady
–
State
Steady
–
State
74
Maximum Junction
–
to
–
Lead
C
R
35
JL
Version 1.0
–
1
–
Date
：
Jan. 2022
珠海海芯电子有限公司
Symbol
Para
Conditions
Min
Typ Max
Units
STATIC PARAM
BV
DSS
I
D
=250
A,V
GS
=0V
V
DS
=60
V
,
V
GS
=0V
T
J
=55°C
down Voltage
60
V
1
I
DSS
n Current
A
5
I
GSS
V
GS(th)
I
D(ON)
V
DS
=0
V
,
V
GS
=±20V
V
DS
=V
GS
I
D
=250
A
V
GS
=10
V
,
V
DS
=5V
V
GS
=10
V
,
I
D
=4.5A
T
J
=125°C
nt
100
3
nA
V
1
2.1
20
A
46
80
56
100
77
m
R
DS(ON)
Static Drain
–
V
GS
=4.5
V
,
I
D
=3A
=5
V
,
I
D
=4.5A
A,V
GS
=0V
m
S
64
g
FS
Forward Trans
Diode Forward
11
V
SD
0.74
1
3
V
I
S
Maximum Bod
Pulsed Bo
A
I
SM
20
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
450 540
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
60
25
V
1.65
2
SWITCHING PARAMETERS
Q
g
(10V)
Q
g
(4.5V)
Q
gs
T
o
tal Gate Charge
.5 10.5
nC
nC
nC
nC
ns
V
V
DS
=3
T
o
tal Gate Charge
Gate Source Charge
Gate Drain Charge
Turn
–
On DelayTime
Turn
–
On Rise Time
Turn
–
Off DelayTime
Turn
–
Off Fall Time
5.5
Q
gd
t
D(on)
V
GS
=10
V
,
V
DS
=30
V
,
R
L
=6.7
,
t
r
s
t
D(off)
t
f
t
rr
I
F
=4.5A,dI/dt=100A/
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Q
rr
I
F
=4.5A,dI/dt=100A/
s
NOTE
A.The value of R
is measured with the device mounted on 1in 2 FR
–
4 board with 2oz. Copper, in a still air environment
JA
with T
A
=25°C. The value in any given application depends on the user’s specific board design.
B.Repetitive rating, pulse width limited by junction temperature.
C.The
R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D.The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
E.These tests are performed with the device mounted on 1 in 2 FR
–
4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
F
.
The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Version 1.0
–
2
–
Date
：
Jan. 2022
珠海海芯电子有限公司
V
D
V
GS,
Gate
–
to
–
Source Voltage (V)
Fig 2. Typical Transfer Characteristics
Fig 1. Typic
T
e
mperature (°C)
ate
–
Source Voltage
Fig 3.On
–
Resistance vs. Junction Temperature
V
DS,
Drain
–
to
–
Source Voltage (V)
V
SD,
Source
–
to
–
Drain Voltage (V)
Fig 6. Typical Capacitance Vs.
Fig 5. Typical Source
–
Drain Diode
Drain
–
to
–
Source Voltage
Forward Voltage
Version 1.0
–
3
–
Date
：
Jan. 2022
珠海海芯电子有限公司
V
DS,
Drain
–
to
–
Source Voltage (V)
Fig 7. G
Fig 8.Maximum Safe Operating Area(Note E
）
urrent (A)
Pulse Width (s)
Fig 9. Single Pulse Power Rating
e vs. Drain
Junction
–
to
–
Ambient (Note E)
e Voltage
Pulse Width (s)
Fig 11. Normalized Maximum Transient Thermal Impedance
Version 1.0
–
4
–
Date
：
Jan. 2022
珠海海芯电子有限公司
SOP
–
ne
Dimensi
millimeters (inches)
MILLIMETERS
INCHES
Max
Max
1.75
0.20
0.51
Min
Min
0.053
0.004
0.014
0.069
0.008
0.020
0.007
5
D
25
0.010
0.189
0.150
0.196
0.157
E
e
0.050 BSC
0.244
H
h
5.80
0.25
0.50
0°
8
0.020
L
q
0.037
S
0.44
0.64
Version 1.0
–
5
–
Date
：
Jan. 2022
珠海海芯电子有限公司
SOP-8 packing information
SOP-8 tape and reel
Tape orient
–
7
–
Version 1.0
Date
：
Jan. 2022
珠海海芯电子有限公司
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Date
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