ZHHXDZ-IRF7416TRPBF-HX

珠海海芯电子有限公司  

IRF7416TRPBF-HX P-Channel 30-V (D-S) MOSFET  

PRODUCT SUMMARY  

V

DS

(V)  

R

DS(on)

(

Ω

)  

Qg (Typ.)  

I

D

(A)  

-9.0  

0.018 at V

GS

= – 10 V  

0.024 at V

GS

= – 4.5 V  

-30  

13nC  

-7.8  

SOP

–

8  

FEATURE

S  

A

PPLICATIONS  

®

⚫

TrenchFET P

ower MOSFET  

Load Switch  

⚫

⚫

100 % R

 

T

e

sted  

g

⚫

Ba

ttery Switch  

Absolute Maximum Ratings  

Param

eter  

Max.  

–

10  

Units  

Continuous Drain Current, V

GS

@

–

10V  

Continuous Drain Current, V

GS

@

–

1

0V  

Pulsed Drain Current

①

 

@ T

 

= 25°C  

I

D  

I

D  

A

A

@ T

 

= 70°C  

A

–

7. 1  

–

45  

I

DM  

Power Dissipation  

W

P

D

@T

A

= 25°C  

2.5  

Linear Derating Factor  

W

/

°C  

0.02  

± 20  

Gate

–

to

–

Source Voltage  

V

V

GS  

E

AS  

Single Pulse Avalanche Energy

②  

m

J  

370  

dv/dt  

Peak Diode Recovery dv/

 

dt  

③

V/ns  

–

5.0  

Operating Junction and  

T

J  

–

55 to

 

+ 1

50  

°C  

Storage

T

e

mperature Range  

T

STG  

Thermal Resistance  

Parameter  

Max  

Units  

Junction

–

to

–

Ambient

⑤  

°C/W  

R

θJA  

50  

Version 1.0  

–

1

–  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

Static Electrical Characteristics @ TJ = 25

°

C (unless otherwise specified)  

Parameter  

Drain

–

to

–

Source Breakdown Voltage  

Min. Typ. Max.

 

Units  

Conditions  

V

=0V,I =

–

250μA  

V

( BR) DSS  

GS  

D

V

–

30  

ΔV

(

B

R

)

DSS

/ΔT  

Reference to 25°C,I

 

=

–

1mA  

D

V/°C  

–

0.024  

V

=

–

10V,I =

–

5.6A

④  

D

0.020  

0.035  

–

2.04  

GS  

R

DS

(

o

n)  

Ω

Static Drain

–

to

–

So

urceOn

–

Resistance  

V

=

–

4.5V,I =

–

2.8A

④  

GS  

D

V

=V ,I

 

=

–

250μA  

DS GS

 

D  

Gate Threshold

Voltage  

V

GS

(

t

h)  

gfs  

–

1.0  

V

Forward Transcondu

ctance  

V

=

–

10V,I =

–

2.8A  

S

5.6  

DS  

D

μA  

I

DSS  

V

=

–

24V,V =0V  

–

1.0  

–

25  

DS  

GS  

Drain

–

to

–

Source Leakage Cu

rrent  

V

=

–

24V,V =0V,T

 

=125

°C  

GS  

DS  

J

Gate

–

to

–

Source Forward Leakage  

Gate

–

to

–

Source Reverse Leakage  

I

GSS  

V

=

–

20V  

–

100  

100  

GS  

nA  

V

=20V  

GS  

Dynamic Electrical

 

Cha

racteristics @ TJ = 25

°

C (unless otherwise specified)  

Parameter  

T

o

tal Gate Charge  

Gate

–

to

–

Source Charge  

Gate

–

to

–

Drain

(

“

M

iller

“

)

C

harge  

Turn

–

On Delay Time  

Rise Time  

Min. Typ.

 

Max

. Units  

Conditions  

Q

g  

I

D

=

–

5.6A  

61  

8.0  

22  

92  

12  

32  

V

DS

=

–

24V  

Q

gs  

n

C  

ns  

V

GS

=

–

10V

④

 

Q

gd  

V

DD

=

–

15V  

I

D

=

–

5.6A  

t

d

(

o

n)  

18  

t

r  

t

d

(

o

ff)  

t

f  

49  

R

G

= 6.2Ω  

Turn

–

Off Delay Time  

Fall Time  

59  

R

D

= 2.7Ω

 

④  

60  

Input Capacitance  

C

iss  

C

oss  

C

rss  

V

GS

= 0V  

1700  

890  

410  

Output Capacitance  

Reverse Transfer Capacitance  

pF  

V

DS

=

–

25V  

ƒ = 1.0MH

z  

1 Diode Characteristics  

Parameter  

Min. Typ. Max.

 

Unit

s  

Conditions  

I

S  

I

SM  

V

SD  

t

rr  

Continuous Source Current (Body Diode)  

–

3.1  

A

Pulsed Source Current  

–

4.5  

(

B

ody Diode)

①  

Diode Forward Voltage  

Reverse Recovery Time  

Reverse Recovery Charge  

–

1.0  

85  

V

T

J

=2

5°C,I

S

=

–

5.6V

GS

=0V

③  

ns  

nC  

56  

99  

T

J

=2

5°C,I

F

=

–

5.6A  

di/dt = 1

00A/μs

③  

Q

rr  

150  

Notes  

①

Repetitive rating;

 

pulse width limited by

 

max. junction temperature.  

②

starting T

J

= 25°C, L = 25mH,R

G

= 25Ω, I

AS

= .5.6A.  

③

I

SD

≤ .5.6A, di/dt ≤ 100A/us, VDD ≤ V(BR)D

SS

, T

J

≤ 150°C  

④

Pulse width ≤ 300us; duty cycle ≤ 2%.  

⑤

S

urface mounted on FR.4 board,

 

t ≤

 

10sec.  

Version 1.0  

–

2

–  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

Fig 2. Typical Transfer Characteristics  

Fig 1. Typi

cal Output Characteristics  

T

J,  

Junction

T

e

mperature ( C)  

Fig  

3.  

Typical  

Output  

Fig 4. Normalized On

–

Resistance  

Vs. Temperature  

V

SD,

Source

–

to

–

Drain Voltage (V)  

Fig 5. Typical Source

–

Drain Diode  

Fig 6. Typical Capacitance Vs.  

Forward Voltage  

Drain

–

to

–

Source Voltage  

Version 1.0  

–

3

–  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

Q

G,  

T

o

tal Gate Charge (nC)  

Fig 7. Typical Gate Charge Vs.  

Fig 8. Maximum Safe Operating  

Gate

–

to

–

Source Voltage  

(°C)  

Starting T

J

, Junction

T

e

mperature  

Fig 9. Maximum Avalanche Energy  

Vs. Drain Current  

Fig 10. Maximum Effective Transient Thermal Impedance, Junction

–

to

–

Ambient  

Version 1.0  

–

4

–  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

SO

–

8 Pa

ckage Ou

tline  

Dim

ensions are show

n in millimeters (inches)  

MILLIMETERS  

DIM  

INCHES  

Max  

Max  

Min  

1.35  

0.10  

0.35  

Min  

A

A

1  

B

1.75  

0.20  

0.51  

0.053  

0.004  

0.014  

0.069  

0.008  

0.020  

0.007  

5

C

D

0.1

9  

0.25  

0.010  

4.80  

3.80  

5.00  

4.00  

0.189  

0.150  

0.196  

0.157  

E

e

1.27 BSC  

0.050 BSC  

0.244  

H

h

5.80  

0.25  

0.50  

0°  

6.20  

0.50  

0.93  

8°  

0.228  

0.010  

0.020  

0

°  

0.020  

L

q

0.037  

8°  

S

0.44  

0.64  

0.018  

0.026  

RECOMMENDED MINIMUM PADS FOR SO

–

8  

Version 1.0  

–

5

–  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

SOP-8 packing information  

SOP-8 tape and reel  

Tape orientation  

–

6

–  

Version 1.0  

Date

：

Jan. 2022  

珠海海芯电子有限公司  

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function or design or for other  

reasons, product

 

specifications and

 

data are subject to change without notice.  

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aix

in Electronics Co.

 

, Ltd.

 

, branches, agents, employees, and  

all person

s actin

g on its or their

 

representatives

(

c

ollectively, the “

z

huhai  

Haixin

dianzi”),

a

ssu

mes no responsibility for any errors, inaccuracies or  

inco

mplete data conta

ined in the table or any other any disclosure of any  

i

nformation  

related to t

he product.(www.haixindianzi.com)  

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Version 1.0  

–

7

–  

Date

：

Jan. 2022