ZHHXDZ-IRF8736TRPBF-HX
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珠海海芯电子有限公司
IRF8736TRPBF-HX
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
Qg (Typ.)
I
D
(A)
a
18
0.004 at VGS = 10 V
0.005 at VGS = 4.5 V
30
6.8nC
16
SOP
–
8
FEATURES
®
⚫
TrenchFET Power
M
CATIONS
⚫
100 % R
T
e
sted
g
CPU Core
witch
Absolute Maximum Ratings T
A
=25°C unles
Parameter
Symbol
Units
V
DS
Drain
–
Source Voltage
Gate
–
Source Voltage
Continuous Drain
Current
AF
V
V
V
GS
T
A
=25°C
T
A
=70°C
I
D
A
Pulsed Drain Current
B
I
DM
T
A
=25°C
T
A
=70°C
3
2.1
P
D
Power Dissipation
Avalanche Current
B
30
I
AR
E
AR
Repetitive avalanche energy 0.3mH
B
135
T
J
, T
STG
Junction and Storage
T
e
mperature Range
–
55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Maximum Junction
–
to
–
Ambient
A
Maximum Junction
–
to
–
Ambient
A
t
≤ 10s
/W
°C/W
R
θJA
Steady
–
State
Steady
–
State
59
16
75
24
Maximum Junction
–
to
–
Lead
C
R
θJL
Version 1.0
–
1
–
Date
：
Jan. 2022
珠海海芯电子有限公司
STATIC PARAMETERS
Symbol Parameter
Conditions
Min
Typ
Max
Units
BV
I
D
=250 A,
V
GS
=0V
DSS
Drain
–
Source Breakdown Voltage
30
V
V
DS
=30
V
,
V
GS
=0V
1
5
I
I
A
Zero Gate Voltage Drain Current
DSS
T
J
=55°C
GSS
V
DS
=0
V
,
V
GS
= ±20V
V
DS
=V
GS
I
D
=250 A
Gate
–
Body leakage curr
t
Gate Threshold V
On state dr
100
2.5
nA
V
V
GS(th)
D(ON)
1
1.8
I
V
GS
=4.5
V
,
V
DS
=5V
V
GS
=10V, I
D
=18A
80
A
4.7
6.5
6.2
82
5.5
8
m
R
Static Drai
DS(O
T
J
=125°C
N)
4.5
V
,
I
D
=15A
I
D
=18A
V
m
S
V
A
7.5
g
FS
Forward Transcon
Diode Forward Voltag
V
SD
0.7
1
I
S
Maximum Body
–
Diode Co
4.5
DYNAMIC PARAMETERS
C
C
C
iss
Input Capacitance
4660
425
240
6060
638
7270
960
530
0.9
pF
pF
pF
V
GS
oss
rss
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
355
R
g
0.45
SWITCHING PARAMETERS
Q
g
(10V)
T
o
tal
Gate Charge
03
124
58
nC
nC
Q
g
(4.5V
T
o
tal
Gate Charge
)
V
GS
=10V, V
DS
=
Q
Q
gs
Gate Source Charge
Gate Drain Charge
Turn
–
On DelayTime
Turn
–
On Rise Time
Turn
–
Off DelayTime
nC
nC
ns
gd
t
D(on)
V
GS
=10V, V
DS
=15
V
,
R
L
=0.83, R
GEN
=3
t
r
t
D(off)
33.
22
t
f
Turn
–
Off Fall Time
t
rr
Body Diode Reverse Recovery Time
I
F
=18A, dI/dt=100A/
I
F
=18A, dI/dt=100A/
s
s
Q
rr
Body Diode Reverse Recovery Charge
a.
The value of R
is measured with the device mounted on 1in 2 FR
–
4 board with 2oz. Copper, in a sti
JA
environment with T
=25°C. The value in any
given application depends on the user’s specific board design
A
b.
Repetitive rating, pulse width limited by junction temperature.
c.
The R
is the sum of the thermal impedence from junction to lead R
and lead to ambient.
JL
JA
d.
The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
e.
These tests are performed with the device mounted on 1 in 2 FR
–
4 board with 2oz. Copper, in a still air environment
with T
=25°C. The SOA curve provides a single puls
e
r
ating.
A
f.
The current rating is based on the t≤10s junction to ambient thermal resistance rating.
Version 1.0
–
2
–
Date
：
Jan. 2022
珠海海芯电子有限公司
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Q
(nC)
g
Fig 2. Gate
–
Charge Characteristics
Fig 1. On
–
Re
ure
I
D
(A)
Fig 4. On
–
Resistance vs. Drain Current and
Gate Voltage
Pulse Width (s)
Fig 3. Single Pulse Power Rating
Junction
–
to
–
Ambient (Note E)
V
GS
(Volts)
V
GS
(Volts)
Fig 5.
Transfer Characteristics
Fig 6. On
–
Resistance vs. Gate
–
Source Voltage
Version 1.0
–
3
–
Date
：
Jan. 2022
珠海海芯电子有限公司
TYPICAL CHAR
ISTICS
25 °C, unless otherwise noted
V
GS
(Volts)
V
DS
(Volts)
Fig 7. Body
–
Diode Characteris
Region Characteristics
V
DS
(Volts)
V
DS
(
Fig 10. Maximum Fo
Operating Area
Fig 9. Capacitance Characteristics
Version 1.0
–
4
–
Date
：
Jan. 2022
珠海海芯电子有限公司
e Width (s)
F
ansient Thermal Impedance
SOP
–
8 Package Outli
Dimensions are shown in
es)
DIM
INCHES
n
Max
0.069
0.008
020
0.03
8°
A
A
1
0.10
0.35
0.19
4.80
3.80
B
C
D
E
e
0
5.00
4.00
1.27 BSC
6.20
H
h
5.80
0.25
0.50
0°
0.228
0.010
0.020
0°
0.50
L
0.93
q
8°
S
0.44
0.64
0.018
0.026
Version 1.0
–
5
–
Date
：
Jan. 2022
珠海海芯电子有限公司
SOP-8 packing information
SOP-8 tape and reel
T
–
7
–
Version 1.0
Date
：
Jan. 2022
珠海海芯电子有限公司
Disclaimer
to improve reliability,
function or design or for other
r
ations and
data are subject to change without notice.
s Co.
, Ltd.
, branches, agents, employees, and
all pe
their representatives
(
c
ollectively, the “
z
huhai
Haixind
sponsibility for any errors, inaccuracies or
incomplete
table or any other any disclosure of any
information
www.haixindianzi.com)
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e, representation or warranty on the
product for any p
oods or continuous production.
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o
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on Zhuhai Haixin relinquished:
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or use of any products;
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and all liability, includi
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incidental ; (
3 )
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ncluding a particular purpose,
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–
infringement and mer
Statement on certain typ
sed on knowledge of the
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demand that the Zhuhai Haixin of.
he product
is suitable
for a
particular application is non
–
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r’ s
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verify specific
product features in the
e specification is
appropriate for use in a particular a
ata sheets and
technical specifications can be provided
he application
and performance over time. All operat
ng
typical
parameters must be made by customer’s te
for each
customer application.
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herein.
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Version 1.0
–
8
–
Date
：
Jan. 2022
